APTGT300A60D3G Microsemi Power Products Group, APTGT300A60D3G Datasheet - Page 5

• Manufacturer Part Number: APTGT300A60D3G
• Description: IGBT MODULE TRENCH PHASE LEG D3
• Manufacturer: Microsemi Power Products Group

Specifications of APTGT300A60D3G

• Igbt Type: Trench and Field Stop
• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.9V @ 15V, 300A
• Current - Collector (ic) (max): 400A
• Current - Collector Cutoff (max): 500µA
• Input Capacitance (cies) @ Vce: 18.5nF @ 25V
• Power - Max: 940W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: D3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
0.25
0.15
0.05
80
60
40
20
0.3
0.2
0.1
0
0.00001
0
0
Operating Frequency vs Collector Current
switching
0.5
0.3
0.9
0.1
0.7
Hard
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.05
100
ZVS
0.0001
I
200
C
(A)
ZCS
V
D=50%
R
T
T
300
J
c
CE
G
=150°C
=85°C
=2.2Ω
=300V
Rectangular Pulse Duration in Seconds
0.001
Single Pulse
400
Diode
www.microsemi.com
0.01
500
400
300
200
100
APTGT300A60D3G
0
0
0.1
Forward Characteristic of diode
T
0.4
J
=150°C
0.8
V
1.2
F
1
(V)
T
J
=25°C
1.6
2
10
2.4
5 - 5