APTGT225SK170G Microsemi Power Products Group, APTGT225SK170G Datasheet - Page 5

• Manufacturer Part Number: APTGT225SK170G
• Description: IGBT 1700V 340A 1250W SP6
• Manufacturer: Microsemi Power Products Group

Specifications of APTGT225SK170G

• Igbt Type: Trench and Field Stop
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 1700V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 225A
• Current - Collector (ic) (max): 340A
• Current - Collector Cutoff (max): 500µA
• Input Capacitance (cies) @ Vce: 20nF @ 25V
• Power - Max: 1250W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: SP6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
0.16
0.12
0.08
0.04
20
15
10
5
0
0.2
0.00001
0
0
Operating Frequency vs Collector Current
switching
hard
0.05
0.9
0.7
0.5
0.1
0.3
60
ZCS
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
ZVS
120
0.0001
I
C
(A)
180
240
V
D=50%
R
T
T
CE
G
J
C
=125°C
=75°C
=3.3Ω
=900V
www.microsemi.com
300
0.001
rectangular Pulse Duration (Seconds)
Single Pulse
360
0.01
Diode
450
400
350
300
250
200
150
100
50
0
APTGT225SK170G
0
T
0.1
Forward Characteristic of diode
J
=125°C
0.5
1
V
T
F
1.5
J
(V)
=25°C
1
2
T
J
=125°C
2.5
10
3
5 - 5