APTGT750U60D4G Microsemi Power Products Group, APTGT750U60D4G Datasheet - Page 3
APTGT750U60D4G
Manufacturer Part Number
APTGT750U60D4G
Description
IGBT 600V 1000A 2300W D4
Manufacturer
Microsemi Power Products Group
Datasheet
1.APTGT750U60D4G.pdf
(5 pages)
Specifications of APTGT750U60D4G
Igbt Type
Trench and Field Stop
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.9V @ 15V, 800A
Current - Collector (ic) (max)
1000A
Current - Collector Cutoff (max)
1mA
Input Capacitance (cies) @ Vce
49nF @ 25V
Power - Max
2300W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
D4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Thermal and package characteristics
Symbol Characteristic
Torque
D4 Package outline
V
R
T
Wt
T
T
ISOL
STG
thJC
C
J
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
(dimensions in mm)
www.microsemi.com
APTGT750U60D4G
Diode
IGBT
M6
M4
2500
Min
-40
-40
-40
3
1
Typ
0.065
Max
0.11
175
125
125
350
5
2
°C/W
Unit
N.m
°C
V
g
3 - 5