APTGT200H60G Microsemi Power Products Group, APTGT200H60G Datasheet
APTGT200H60G
Specifications of APTGT200H60G
Related parts for APTGT200H60G
APTGT200H60G Summary of contents
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... V Gate – Emitter Voltage GE P Maximum Power Dissipation D RBSOA Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTGT200H60G V = 600V CES ® 200A @ Tc = 80°C C Application • Welding converters • ...
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... Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr Er Reverse Recovery Energy APTGT200H60G = 25°C unless otherwise specified j Test Conditions 600V 25°C V =15V 200A T = 150°C ...
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... J T Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight SP6 Package outline (dimensions in mm) See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com APTGT200H60G Min IGBT Diode 2500 -40 -40 -40 To heatsink M6 3 For terminals M5 2 www.microsemi.com ...
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... Reverse Bias Safe Operating Area 500 400 300 Eon 200 V GE 100 Er T =150° Single Pulse 0.001 0.01 Rectangular Pulse Duration in Seconds www.microsemi.com APTGT200H60G Output Characteristics V =19V = 150° =13V GE V =15V GE V =9V GE 0.5 1 1.5 2 2.5 3 3 300V Eoff = 15V = 2Ω ...
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... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGT200H60G 400 V ...
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... APTGT200H60G www.microsemi.com ...