APTGT200DH120G Microsemi Power Products Group, APTGT200DH120G Datasheet - Page 5

• Manufacturer Part Number: APTGT200DH120G
• Description: IGBT MOD TRENCH ASYM BRIDGE SP6
• Manufacturer: Microsemi Power Products Group

Specifications of APTGT200DH120G

• Igbt Type: Trench and Field Stop
• Configuration: Asymmetrical Bridge
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.1V @ 15V, 200A
• Current - Collector (ic) (max): 280A
• Current - Collector Cutoff (max): 350µA
• Input Capacitance (cies) @ Vce: 14nF @ 25V
• Power - Max: 890W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: SP6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
0.25
0.15
0.05
60
50
40
30
20
10
0
0.3
0.2
0.1
0.00001
0
0
Operating Frequency vs Collector Current
switching
Hard
ZCS
0.9
0.05
0.7
0.5
40
0.1
0.3
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
ZVS
80
120
0.0001
I
C
(A)
160
V
D=50%
R
T
Tc=75°C
J
CE
G
=125°C
200
=2.7Ω
=600V
240
0.001
rectangular Pulse Duration (Seconds)
www.microsemi.com
280
Single Pulse
0.01
APTGT200DH120G
400
350
300
250
200
150
100
50
0
0
Forward Characteristic of diode
0.1
0.4
T
J
=125°C
0.8
1.2
V
F
(V)
1
T
J
=25°C
1.6
Diode
T
J
=125°C
2
2.4
10
5 - 5