APTGT300DH60G Microsemi Power Products Group, APTGT300DH60G Datasheet - Page 5
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APTGT300DH60G
Manufacturer Part Number
APTGT300DH60G
Description
IGBT MOD TRENCH ASYM BRIDGE SP6
Manufacturer
Microsemi Power Products Group
Datasheet
1.APTGT300DH60G.pdf
(5 pages)
Specifications of APTGT300DH60G
Igbt Type
Trench and Field Stop
Configuration
Asymmetrical Bridge
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.8V @ 15V, 300A
Current - Collector (ic) (max)
430A
Current - Collector Cutoff (max)
350µA
Input Capacitance (cies) @ Vce
24nF @ 25V
Power - Max
1150W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
SP6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
0.25
0.15
0.05
120
100
0.2
0.1
80
60
40
20
0.00001
0
0
Operating Frequency vs Collector Current
0
0.5
ZCS
0.3
0.9
0.1
0.7
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
switching
0.05
Hard
100
ZVS
200
0.0001
I
C
(A)
300
V
D=50%
R
T
T
J
c
CE
G
=150°C
=85°C
=1.8Ω
400
=300V
Rectangular Pulse Duration in Seconds
0.001
Single Pulse
500
www.microsemi.com
Diode
0.01
600
500
400
300
200
100
0
APTGT300DH60G
0
0.1
Forward Characteristic of diode
T
0.4
J
=150°C
T
J
=125°C
0.8
V
F
1
(V)
1.2
T
1.6
J
=25°C
10
2
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