APTGF400U120D4G Microsemi Power Products Group, APTGF400U120D4G Datasheet - Page 5

• Manufacturer Part Number: APTGF400U120D4G
• Description: IGBT 1200V 510A 2500W D4
• Manufacturer: Microsemi Power Products Group

Specifications of APTGF400U120D4G

• Igbt Type: NPT
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.7V @ 15V, 400A
• Current - Collector (ic) (max): 510A
• Current - Collector Cutoff (max): 5mA
• Input Capacitance (cies) @ Vce: 26nF @ 25V
• Power - Max: 2500W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: D4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
70
60
50
40
30
20
10
0.08
0.06
0.04
0.02
0
0.1
0.00001
0
0
Operating Frequency vs Collector Current
0.05
0.9
0.7
0.5
0.1
0.3
100
ZVS
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
switching
hard
200
0.0001
I
C
ZCS
(A)
300
V
D=50%
R
T
T
CE
J
C
G
=125°C
=75°C
=2.2 Ω
400
=600V
0.001
www.microsemi.com
rectangular Pulse Duration (Seconds)
500
Single Pulse
Diode
0.01
APTGF400U120D4G
800
600
400
200
0
0
0.1
Forward Characteristic of diode
0.5
1
T
J
=125°C
V
1.5
F
(V)
1
T
2
J
=25°C
2.5
10
3
5 - 5