APTGT75TA120PG Microsemi Power Products Group, APTGT75TA120PG Datasheet - Page 4

• Manufacturer Part Number: APTGT75TA120PG
• Description: IGBT MOD TRENCH 3PHASE LEG SP6-P
• Manufacturer: Microsemi Power Products Group

Specifications of APTGT75TA120PG

• Igbt Type: Trench and Field Stop
• Configuration: Three Phase
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.1V @ 15V, 75A
• Current - Collector (ic) (max): 100A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 5.34nF @ 25V
• Power - Max: 350W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: SP6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curve
150
125
100
150
125
100
16
14
12
10
0.35
0.25
0.15
0.05
Switching Energy Losses vs Gate Resistance
75
50
25
75
50
25
0.4
0.3
0.2
0.1
8
6
4
2
0
0
0
0.00001
0
0
0
5
V
V
I
T
C
CE
GE
J
= 75A
= 125°C
Output Characteristics (V
= 600V
=15V
4
0.1
0.9
0.3
0.05
6
0.7
0.5
Transfert Characteristics
Gate Resistance (ohms)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
8
1
T
7
J
=25°C
12
0.0001
8
V
V
CE
GE
16
2
(V)
T
(V)
J
=25°C
9
20
T
10
GE
J
24
=125°C
3
T
Eon
=15V)
J
=125°C
rectangular Pulse Duration (Seconds)
0.001
11
28
Eoff
Er
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Single Pulse
32
12
IGBT
4
0.01
175
150
125
100
150
125
100
17.5
12.5
75
50
25
75
50
25
7.5
2.5
0
0
15
10
5
0
0
APTGT75TA120PG
0
0
V
T
R
Energy losses vs Collector Current
Reverse Bias Safe Operating Area
V
V
R
T
J
GE
T
G
0.1
=125°C
CE
GE
J
=4.7Ω
G
J
= 125°C
=15V
= 4.7Ω
= 125°C
= 600V
= 15V
25
400
1
Output Characteristics
50
V
GE
Eoff
=17V
V
I
C
800
V
CE
75
CE
(A)
2
(V)
1
(V)
100
1200
V
GE
3
=15V
Eon
V
V
125
GE
GE
=13V
=9V
Er
1600
10
150
4
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