APTGF200A120D3G Microsemi Power Products Group, APTGF200A120D3G Datasheet - Page 4
APTGF200A120D3G
Manufacturer Part Number
APTGF200A120D3G
Description
IGBT MODULE NPT PHASE LEG D3
Manufacturer
Microsemi Power Products Group
Datasheet
1.APTGF200A120D3G.pdf
(5 pages)
Specifications of APTGF200A120D3G
Igbt Type
NPT
Configuration
Half Bridge
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.7V @ 15V, 200A
Current - Collector (ic) (max)
300A
Current - Collector Cutoff (max)
5mA
Input Capacitance (cies) @ Vce
13nF @ 25V
Power - Max
1400W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
D3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Typical Performance Curve
400
300
200
100
400
300
200
100
100
0.08
0.06
0.04
0.02
Switching Energy Losses vs Gate Resistance
80
60
40
20
0.1
0
0
0.00001
0
0
0
5
0
V
V
I
T
C
Output Characteristics (V
CE
GE
J
0.05
0.5
= 200A
0.3
0.1
0.9
0.7
= 125°C
6
= 600V
5
=15V
1
Gate Resistance (ohms)
Transfert Characteristics
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
10
7
2
0.0001
15
V
8
T
V
J
T
CE
GE
=125°C
J
3
=25°C
(V)
(V)
T
20
9
J
=125°C
T
J
=25°C
4
10
25
GE
Eoff
=15V)
rectangular Pulse Duration (Seconds)
0.001
5
30
11
Eon
Err
Single Pulse
35
12
6
www.microsemi.com
IGBT
0.01
500
400
300
200
100
60
50
40
30
20
10
400
300
200
100
0
0
APTGF200A120D3G
0
0
0
0
V
V
R
T
V
T
R
Reverse Bias Safe Operating Area
T
Energy losses vs Collector Current
CE
GE
J
G
GE
J
G
J
= 125°C
=125°C
= 4.7 Ω
=4.7 Ω
0.1
= 125°C
= 600V
= 15V
=15V
300
1
100
Output Characteristics
2
600
I
V
200
C
V
V
CE
(A)
GE
3
CE
(V)
=20V
900
1
(V)
4
300
Eon
1200
V
V
GE
V
Eoff
GE
5
GE
=15V
=9V
Err
=12V
1500
400
10
6
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