APTGT450DU60G Microsemi Power Products Group, APTGT450DU60G Datasheet
APTGT450DU60G
Specifications of APTGT450DU60G
Related parts for APTGT450DU60G
APTGT450DU60G Summary of contents
Page 1
... Gate – Emitter Voltage GE P Maximum Power Dissipation D RBSOA Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTGT450DU60G V ® I Application • AC Switches • Switched Mode Power Supplies • ...
Page 2
... Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr E Reverse Recovery Energy r APTGT450DU60G = 25°C unless otherwise specified j Test Conditions 600V 25°C V =15V 450A T = 150°C C ...
Page 3
... J T Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight SP6 Package outline (dimensions in mm) See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com APTGT450DU60G Min IGBT Diode 2500 -40 -40 -40 To heatsink M6 3 For terminals M5 2 www.microsemi.com ...
Page 4
... Gate Resistance (ohms) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.1 0.9 0.08 0.7 0.06 0.5 0.04 0.3 0.02 0.1 0.05 0 0.00001 0.0001 APTGT450DU60G =15V) GE 1000 T 800 T =150°C 600 J 400 200 =25° 1.5 2 2.5 0 Energy losses vs Collector Current ...
Page 5
... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGT450DU60G 1000 V ...