APTGT450A60G Microsemi Power Products Group, APTGT450A60G Datasheet - Page 5
![no-image](/images/manufacturer_photos/0/4/447/microsemi_power_products_group_sml.jpg)
APTGT450A60G
Manufacturer Part Number
APTGT450A60G
Description
IGBT MOD TRENCH PHASE LEG SP6
Manufacturer
Microsemi Power Products Group
Datasheet
1.APTGT450A60G.pdf
(5 pages)
Specifications of APTGT450A60G
Igbt Type
Trench and Field Stop
Configuration
Half Bridge
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.8V @ 15V, 450A
Current - Collector (ic) (max)
550A
Current - Collector Cutoff (max)
500µA
Input Capacitance (cies) @ Vce
37nF @ 25V
Power - Max
1750W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
SP6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
0.16
0.14
0.12
0.08
0.06
0.04
0.02
120
100
0.1
80
60
40
20
0.00001
0
0
Operating Frequency vs Collector Current
0
ZCS
0.5
switching
0.3
0.1
0.9
0.7
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.05
Hard
200
ZVS
0.0001
I
400
C
(A)
V
D=50%
R
T
T
600
CE
G
J
c
=150°C
=85°C
=1Ω
=300V
Rectangular Pulse Duration in Seconds
0.001
Single Pulse
800
Diode
www.microsemi.com
0.01
1000
800
600
400
200
0
0
0.1
APTGT450A60G
Forward Characteristic of diode
T
0.4
J
=150°C
T
0.8
J
=125°C
V
1
F
(V)
1.2
1.6
T
J
=25°C
10
2
5 - 5