APTGT300A120G Microsemi Power Products Group, APTGT300A120G Datasheet - Page 5

• Manufacturer Part Number: APTGT300A120G
• Description: IGBT MODULE TRENCH PHASE LEG SP6
• Manufacturer: Microsemi Power Products Group

Specifications of APTGT300A120G

• Igbt Type: Trench and Field Stop
• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.1V @ 15V, 300A
• Current - Collector (ic) (max): 420A
• Current - Collector Cutoff (max): 500µA
• Input Capacitance (cies) @ Vce: 21nF @ 25V
• Power - Max: 1380W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: SP6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
60
50
40
30
20
10
0.16
0.12
0.08
0.04
0
0.2
0.00001
0
0
Operating Frequency vs Collector Current
switching
Hard
50
0.05
0.9
0.7
0.5
0.1
0.3
ZCS
100 150 200 250 300 350 400
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
ZVS
0.0001
I
C
(A)
V
D=50%
R
T
Tc=75°C
CE
J
G
=125°C
=1.8Ω
=600V
0.001
rectangular Pulse Duration (Seconds)
www.microsemi.com
Single Pulse
0.01
600
500
400
300
200
100
0
0
APTGT300A120G
Forward Characteristic of diode
0.1
0.4
T
J
=125°C
0.8
1.2
V
F
(V)
1
T
J
=25°C
1.6
Diode
T
J
=125°C
2
2.4
10
5 - 5