APTGT300H60G Microsemi Power Products Group, APTGT300H60G Datasheet
APTGT300H60G
Specifications of APTGT300H60G
Related parts for APTGT300H60G
APTGT300H60G Summary of contents
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... V Gate – Emitter Voltage GE P Maximum Power Dissipation D RBSOA Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTGT300H60G V = 600V CES ® 300A @ Tc = 80°C C Application • Welding converters • ...
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... Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr E Reverse Recovery Energy r APTGT300H60G = 25°C unless otherwise specified j Test Conditions 600V 25°C V =15V 300A T = 150°C C ...
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... J T Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight SP6 Package outline (dimensions in mm) See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com APTGT300H60G Min IGBT Diode 2500 -40 -40 -40 To heatsink M6 3 For terminals M5 2 www.microsemi.com ...
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... Reverse Bias Safe Operating Area 700 Eoff 600 500 Eon 400 300 200 100 Single Pulse 0.001 0.01 Rectangular Pulse Duration in Seconds www.microsemi.com APTGT300H60G Output Characteristics = 150° =13V GE V =19V GE V =15V GE V =9V GE 0.5 1 1.5 2 2.5 3 3 300V Eoff ...
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... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGT300H60G Forward Characteristic of diode 600 ...