APTGT200H120G Microsemi Power Products Group, APTGT200H120G Datasheet
APTGT200H120G
Specifications of APTGT200H120G
Related parts for APTGT200H120G
APTGT200H120G Summary of contents
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... Gate – Emitter Voltage GE P Maximum Power Dissipation D RBSOA Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTGT200H120G ® Application • Welding converters • Switched Mode Power Supplies Q3 • ...
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... Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr E Reverse Recovery Energy r APTGT200H120G = 25°C unless otherwise specified j Test Conditions 1200V 25°C V =15V 200A T = 125°C C ...
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... J T Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight SP6 Package outline (dimensions in mm) See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com APTGT200H120G Min IGBT Diode 2500 -40 -40 -40 To heatsink M6 3 For terminals M5 2 www.microsemi.com ...
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... Gate Resistance (ohms) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.16 0.14 0.9 0.12 0.7 0.1 0.5 0.08 0.06 0.3 0.04 0.1 0.02 0.05 0 0.00001 0.0001 APTGT200H120G =15V) GE 400 T T =125°C 300 J 200 100 Energy losses vs Collector Current 50 V =25°C ...
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... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGT200H120G 400 V ...