IXGN50N60BD3 IXYS, IXGN50N60BD3 Datasheet - Page 4

• Manufacturer Part Number: IXGN50N60BD3
• Description: IGBT 600V FRD SOT-227B
• Manufacturer: IXYS
• Series: HiPerFAST™r

Specifications of IXGN50N60BD3

• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 50A
• Current - Collector (ic) (max): 75A
• Current - Collector Cutoff (max): 200µA
• Input Capacitance (cies) @ Vce: 4.1nF @ 25V
• Power - Max: 250W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Channel Type: N
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 75A
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Compliant

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0.001
0.01
0.1
0.00001
20
15
10
6
5
4
3
2
1
0
5
0
1
0
0
Fig. 7. Dependence of E
Fig. 9. Gate Charge
Fig. 11. Transient Thermal Resistance
R
T
V
G
J
I
CE
= 125°C
= 4.7
C
=50A
= 250V
50


20
Q
100
g
- nanocoulombs
I
C
40
- Amperes
0.0001
150
60
200
ON
and E
80
250
E
OFF
E
(ON)
(OFF)
on I
300
0.001
100
Pulse Width - Seconds
12
10
8
6
4
2
0
C
.
100
600
0.1
10
1
0.01
Fig. 8. Dependence of tfi and E
6
5
4
3
2
1
0
0
Fig. 10. Turn-off Safe Operating Area
0
E
E
E
E
T
(ON)
(ON)
(ON)
(OFF)
J
= 125°C
10
100
T
R
dV/dt < 5V/ns
20
J
G
= 125°C
200
= 5.2
V
R
CE
G
I
C
I
I
C
C
= 100A
- Ohms
- Volts
0.1


= 50A
=25A
30
IXGN 50N60BD2
IXGN 50N60BD3
300
40
OFF
400
50
on R
E
E
(OFF)
(OFF)
500
G
60
.
1
12
10
8
6
4
2
0
4 - 5