IXGN320N60A3 IXYS, IXGN320N60A3 Datasheet - Page 5

• Manufacturer Part Number: IXGN320N60A3
• Description: IGBT 600V SOT-227B
• Manufacturer: IXYS
• Series: GenX3™r

Specifications of IXGN320N60A3

• Igbt Type: PT
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.25V @ 15V, 100A
• Current - Collector (ic) (max): 320A
• Current - Collector Cutoff (max): 150µA
• Input Capacitance (cies) @ Vce: 18nF @ 25V
• Power - Max: 735W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Channel Type: N
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 320A
• Gate To Emitter Voltage (max): ±20V
• Package Type: SOT-227B
• Pin Count: 4
• Mounting: Screw
• Operating Temperature (min): -55
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 320
• Ic110, Tc=110°c, Igbt, (a): 170
• Vce(sat), Max, Tj=25°c, Igbt, (v): 1.25
• Rthjc, Max, Igbt, (°c/w): 0.17
• Package Style: SOT-227B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2009 IXYS CORPORATION, All Rights Reserved
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150
130
110
1600
1400
1200
1000
450
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350
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150
100
90
70
50
800
600
400
200
50
25
1
80
t
R
V
R
V
t
T
V
T
f
G
CE
r
CE
J
CE
G
J
35
Fig. 15. Resistive Turn-off Switching Times
Fig. 13. Resistive Turn-on Switching Times
= 1Ω, V
= 125ºC, V
= 25ºC
= 1Ω , V
I
2
= 400V
= 400V
= 400V
C
= 320A, 160A, 80A
120
45
GE
Fig.11. Resistive Turn-on Rise Time
GE
t
3
t
d(off)
d(on)
= 15V
GE
= 15V
T
J
= 15V
= 125ºC
- - - -
vs. Junction Temperature
- - - -
vs. Collector Current
55
I
vs. Gate Resistance
160
C
4
= 80A
T
I
J
C
R
- Degrees Centigrade
- Amperes
G
65
- Ohms
5
200
75
6
85
240
7
I
C
I
95
C
I
= 320A
C
= 160A
8
= 80A
280
105
9
115
320
10
350
325
300
275
250
225
200
175
88
84
80
76
72
68
64
60
56
125
1800
1700
1600
1500
1400
1300
1200
1100
1000
170
150
130
110
1700
1500
1300
1100
900
90
70
50
900
700
500
80
25
1
t
R
V
R
V
100
Fig. 14. Resistive Turn-off Switching Times
f
G
CE
t
T
V
CE
G
Fig. 16. Resistive Turn-off Switching Times
J
35
f
CE
= 1Ω, V
= 1Ω , V
= 400V
= 125ºC, V
2
= 400V
= 400V
120
45
Fig. 12. Resistive Turn-on Rise Time
GE
GE
I
3
t
C
vs. Junction Temperature
d(off)
= 15V
140
t
= 15V
= 160A
d(off)
GE
T
55
= 15V
J
- - - -
vs. Gate Resistance
- Degrees Centigrade
- - - -
4
160
vs. Collector Current
I
I
C
R
C
65
I
= 320A
G
= 160A
C
180
- Ohms
I
5
- Amperes
C
= 80A
IXGN320N60A3
75
200
6
85
220
T
T
7
I
J
J
C
95
= 125ºC
= 25ºC
= 80A
240
8
105
260
I
C
= 320A
IXYS REF: G_320N60A3(96)7-03-08-A
115
9
280
125
300
10
380
340
300
260
220
180
140
1000
900
800
700
600
500
400
300
200
100
320