IXSN62N60U1 IXYS, IXSN62N60U1 Datasheet
IXSN62N60U1
Manufacturer Part Number
IXSN62N60U1
Description
IGBT 90A 600V SOT-227B
Manufacturer
IXYS
Datasheet
1.IXSN62N60U1.pdf
(2 pages)
Specifications of IXSN62N60U1
Igbt Type
PT
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.5V @ 15V, 50A
Current - Collector (ic) (max)
90A
Current - Collector Cutoff (max)
750µA
Input Capacitance (cies) @ Vce
4.5nF @ 25V
Power - Max
250W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
90
Ic90, Tc=90°c, Igbt, (a)
50
Ic110, Tc=110°c, Igbt, (a)
-
Vce(sat), Max, Tj=25°c, Igbt, (v)
2.5
Tfi, Typ, Igbt, (ns)
400
Eoff, Typ, Tj=125°c, Igbt, (mj)
9
Rthjc, Max, Igbt, (k/w)
0.5
Package Style
SOT-227B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXSN62N60U1
Manufacturer:
IXYS
Quantity:
27
Part Number:
IXSN62N60U1
Quantity:
57
© 2000 IXYS All rights reserved
IGBT with Diode
Short Circuit SOA Capability
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
t
(SCSOA)
P
V
T
T
T
M
Weight
Symbol
BV
V
I
I
V
IXYS reserves the right to change limits, test conditions, and dimensions.
C25
C90
CM
CES
GES
SC
J
JM
stg
CGR
C
CES
GES
GEM
ISOL
GE(th)
CE(sat)
d
CES
Test Conditions
T
T
Continuous
Transient
T
T
T
V
Clamped inductive load, L = 30 mH
V
R
T
50/60 Hz
I
Mounting torque
Terminal connection torque (M4)
Test Conditions
I
I
V
V
V
I
C
C
C
ISOL
C
C
C
C
J
J
GE
GE
CE
GE
CE
G
= 22 W, non repetitive
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 90°C
= 25°C, 1 ms
= 15 V, T
= 15 V, V
= 25°C
£ 1 mA
= 3 mA, V
= 4 mA, V
= 0.8 • V
= 0 V
= 0 V, V
= I
C90
, V
GE
GE
VJ
CE
CES
GE
CE
= 125°C, R
= 15 V
= 360 V, T
= ±20 V
= V
= 0 V
GE
t = 1 min
t = 1 s
GE
= 1 MW
J
G
= 125°C
= 22 W
T
T
J
J
(T
= 25°C
= 125°C
J
= 25°C, unless otherwise specified)
IXSN 62N60U1
min.
600
Characteristic Values
4
-55 ... +150
-55 ... +150
@ 0.8 V
Maximum Ratings
I
CM
typ.
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
= 100
2500
3000
600
600
±20
±30
180
250
150
CES
10
90
50
30
2
4
max.
±100
750
2.5
15
8
mA
V~
V~
mA
nA
ms
°C
°C
°C
W
3
1
V
A
V
V
A
A
A
A
V
V
V
g
miniBLOC, SOT-227 B
1 = Emitter ,
2 = Gate,
Either Emitter terminal can be used as
Main or Kelvin Emitter
Features
• International standard package
• Aluminium-nitride isolation
• Isolation voltage 3000 V~
• Low V
• Fast Recovery Epitaxial Diode
• Low collector-to-case capacitance
• Low package inductance (< 10 nH)
Applications
• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptible power supplies (UPS)
• Switch-mode and resonant-mode
Advantages
• Space savings
• Easy to mount with 2 screws
• High power density
V
I
V
C25
miniBLOC (ISOTOP) compatible
- high power dissipation
- for minimum on-state conduction
- short t
(< 50 pF)
- reducesd RFI
- easy to drive and to protect
power supplies
CES
CE(sat)
losses
CE(sat)
rr
and I
= 600 V
= 90 A
= 2.5 V
RM
3 = Collector
4 = Emitter
2
1
92815I (7/00)
3
1 - 2
4
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IXSN62N60U1 Summary of contents
Page 1
... 0.8 • V CES CE CES ± GES CE(sat) C C90 GE IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved IXSN 62N60U1 2 4 Maximum Ratings 600 = 1 MW 600 GE ±20 ± 180 = 100 0.8 V CES = 125° 250 ...
Page 2
... A/ 125°C 175 25° IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 4,850,072 4,931,844 5,034,796 IXSN62N60U1 miniBLOC, SOT-227 B max 250 nC M4 screws (4x) supplied 60 nC Dim. Millimeter Min. Max. 120 nC A 31.50 31 ...