IXSN80N60AU1 IXYS, IXSN80N60AU1 Datasheet
IXSN80N60AU1
Specifications of IXSN80N60AU1
Related parts for IXSN80N60AU1
IXSN80N60AU1 Summary of contents
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... V CES CE CES ± GES CE(sat) C C90 GE IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved IXSN 80N60AU1 G E Maximum Ratings 600 = 1 MW 600 GE ±20 ±30 160 80 320 = 160 0.8 V CES = 125°C ...
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... J min. typ. max. /dt = 480 A/ 125°C 175 25° IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 4,850,072 4,931,844 5,034,796 IXSN80N60AU1 miniBLOC, SOT-227 screws (4x) supplied nC Dim. Millimeter Min. Max 31.50 31.88 B 7.80 8. 4.09 4. ...
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... 125° Volts GE © 2000 IXYS All rights reserved 13V 11V 25° 160A 40° IXSN80N60AU1 Fig.2 Output Characterstics 400 T = 360 320 280 240 200 160 120 Volts CE Fig.4 Temperature Dependence of Output Saturation Voltage 1 160A V = 15V C GE 1.4 1.3 1.2 1.1 I ...
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... IXYS All rights reserved 24 1000 18 E off 100 120 140 160 1000 0.01 400 500 Diode IGBT 0.001 0.01 Time - Seconds IXSN80N60AU1 Fig.8 Dependence of Turn-Off Energy Per Pulse and Fall Time 125° 80A C 800 E off 600 400 t fi 200 ...