MITA15WB1200TMH IXYS, MITA15WB1200TMH Datasheet - Page 2

• Manufacturer Part Number: MITA15WB1200TMH
• Description: MODULE IGBT CBI
• Manufacturer: IXYS

Specifications of MITA15WB1200TMH

• Igbt Type: Trench
• Configuration: Three Phase Inverter with Brake
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 15A
• Current - Collector (ic) (max): 30A
• Current - Collector Cutoff (max): 600µA
• Input Capacitance (cies) @ Vce: 1.1nF @ 25V
• Power - Max: 120W
• Input: Three Phase Bridge Rectifier
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: MiniPack2
• Vrrm, Rect 1/3 Ph., (v): 1600
• Idavm, Tc = 80°c, Rect 1/3 Ph., (a): 62
• Rthjc, Typ, Rect 1/3 Ph., (k/w): 2.1
• Vces, Inv 3 - Ph., (v): 1200
• Ic25, Tc = 25°c, Inv 3 - Ph., (a): 30
• Ic80, Tc = 80°c, Inv 3 - Ph., (a): 21
• Vce(sat), Typ, Tj = 25°c, Inv 3 - Ph., (v): 1.9
• Rthjc, Typ, Inv 3 - Ph., (k/w): 1.1
• Vces, Br Chopper, (v): 1200
• Ic80, Tc = 80°c, Br Chopper, (a): 20
• Rthjc, Typ, Br Chopper, (k/w): 1.1
• Package Style: MiniPack 2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
Output Inverter T1 - T6
Symbol
V
V
V
I
I
RBSOA
t
(SCSOA)
P
Symbol
V
V
I
I
t
t
t
t
E
E
C
Q
R
R
Output Inverter D1 - D6
Symbol
I
I
Symbol
V
I
t
R
R
CES
GES
C25
C80
SC
d(on)
r
d(off)
f
F25
F80
RM
rr
GE(th)
GES
GEM
CE(sat)
on
off
F
CES
tot
ies
thJC
thCH
Gon
thJC
thCH
Conditions
T
Continuous
Transient
T
T
V
Clamped inductive load; L = 00 µH
V
T
T
Conditions
I
I
V
V
Inductive load, T
V
V
V
V
(per IGBT)
Conditions
T
T
Conditions
I
V
I
(per diode)
C
C
F
F
VJ
C
C
GE
VJ
C
CE
CE
CE
GE
CE
CE
C
C
CE
R
= 0 A; V
= 0 A; V
= 5 A; V
= 0.5 mA; V
= 25°C
= 80°C
= 25°C
= 25°C
= 80°C
= 600 V; di
= 25°C to 50°C
= 25°C; non-repetitive
= 600 V; V
= V
= 0 V; V
= 600 V; I
= ± 5 V; R
= 25 V; V
= ±5 V; R
= 720 V; V
CES
; V
GE
GE
GE
GE
GE
GE
C
= 0 V;
= 0 V; T
= 5 V;
GE
GE
GE
= ± 20 V
G
G
= 0 V;
= 5 A
F
= 0 V; f =  MHz
= 75 W; T
= 75 W
= V
VJ
= 5 V; I
= ±5 V; R
/dt = -400A/µs
= 25°C
CE
VJ
= 25°C
T
T
T
T
T
T
C
VJ
VJ
VJ
VJ
VJ
VJ
VJ
= 5 A
G
= 25°C
= 25°C
= 25°C
= 25°C
= 25°C
= 25°C
= 25°C
= 75 W
(T
Advanced Technical Information
VJ
= 25°C, unless otherwise specified)
min.
min.
5
Characteristic Values
Characteristic Values
00
Maximum Ratings
0.35
0.55
typ.
typ.
520
50
25
Maximum Ratings
I
V
.8
2.
0.8
2.
.5
.5
CM
90
50
90
6
CEK
=
< V
200
max.
max.
± 20
± 30
20
50
2.2
6.5
0.6
.
2.4
.6
CES
30
2
30
0
24
6
K/W
K/W
K/W
K/W
mA
mA
mJ
mJ
nC
nA
pF
µs
ns
ns
ns
ns
ns
W
V
V
V
A
A
A
V
V
V
A
A
V
V
A
Conduction
D8 - D13
Rectifier Diode (typ. at T
T1 - T6 / D1 - D6
IGBT (typ. at V
Free Wheeling Diode (typ. at T
T7 / D7
IGBT (typ. at V
Free Wheeling Diode (typ. at T
Thermal Response
D8 - D13
Rectifier Diode (typ.)
T1 - T6 / D1 - D6
IGBT (typ.)
Free Wheeling Diode (typ.)
Equivalent Circuits for Simulation
T
MITA15WB1200TMH
P
J
C
C
V
C
C
C
C
th1
th2
th1
th2
th1
th2
V
V
V
V
V
= tbd J/K; R
= tbd J/K; R
0
0
0
I
0
= tbd J/K; R
= tbd J/K; R
= tbd J/K; R
= tbd J/K; R
0
= 0.90 V; R
= 1.35 V; R
= 1.45 V; R
= 0.9 V; R
= 0.9 V; R
C
V
GE
GE
th1
0
= 5 V; T
= 5 V; T
R
th1
0
th1
th2
0
th1
th2
th1
th2
0
0
0
= 80 mW
= 80 mW
= 12 mW
= 41 mW
= 63 mW
= tbd K/W
= tbd K/W
= tbd K/W
= tbd K/W
= tbd K/W
= tbd K/W
J
R
= 25°C)
C
J
J
th2
0
= 25°C)
= 25°C)
R
J
J
= 25°C)
= 25°C)
th2
T
2 - 4
C