MWI30-06A7 IXYS, MWI30-06A7 Datasheet - Page 4

• Manufacturer Part Number: MWI30-06A7
• Description: MOD IGBT SIXPACK RBSOA 600V E2
• Manufacturer: IXYS

Specifications of MWI30-06A7

• Configuration: Three Phase Inverter
• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 30A
• Current - Collector (ic) (max): 45A
• Current - Collector Cutoff (max): 600µA
• Input Capacitance (cies) @ Vce: 1.6nF @ 25V
• Power - Max: 140W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: E2
• Channel Type: N
• Collector-emitter Voltage: 600V
• Gate To Emitter Voltage (max): ±20V
• Pin Count: 18
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Vces, (v): 600
• Ic25, Tc = 25°c, Igbt, (a): 45
• Ic80, Tc = 80°c, Igbt, (a): 30
• Vce(sat), Typ, Tj = 25°c, Igbt, (v): 1.9
• Eoff, Typ, Tj = 125°c, Igbt, (mj): 1.0
• Rthjc, Max, Igbt, (k/w): 0.88
• If25, Tc = 25°c, Diode, (a): 36
• If80, Tc = 80°c, Diode, (a): 24
• Package Style: E2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
E
E
I
CM
on
on
mJ
mJ
80
60
40
20
A
8
6
4
2
0
4
3
2
1
0
0
0
0
0
Fig. 7 Typ. turn on energy and switching
Fig. 9 Typ. turn on energy and switching
Fig. 11 Reverse biased safe operating area
V
V
R
T
V
V
I
T
C
VJ
VJ
CE
GE
CE
GE
G
R
T
VJ
G
= 300V
= ±15V
= 300V
= 33Ω
= 30A
= 125°C
= ±15V
= 125°C
10
= 33 Ω
100
= 125°C
times versus collector current
times versus gate resistor
RBSOA
20
200
20
30
300
40
400
40
50
R
I
G
C
500
60
V
CE
600
60
70
E
t
t
d(on)
E
t
r
on
t
d(on)
r
on
A
Ω
700
80
80
60
40
20
0
80
60
40
20
ns
ns
V
t
t
E
Z
E
0.0001
off
thJC
off
0.001
0.01
K/W
2.0
1.5
1.0
0.5
0.0
2.0
mJ
1.5
1.0
0.5
0.0
mJ
0.1
0.00001 0.0001 0.001
10
1
0
0
Fig. 8 Typ. turn off energy and switching
Fig.10 Typ. turn off energy and switching
Fig. 12 Typ. transient thermal impedance
V
V
I
T
C
V
V
R
T
VJ
CE
GE
VJ
E
CE
GE
G
= 300V
= ±15V
off
= 30A
= 125°C
= 33Ω
= 300V
= ±15V
10
= 125°C
times versus collector current
times versus gate resistor
20
20
single pulse
30
0.01
40
40
MWI 30-06 A7
MWI 30-06 A7
MWI 30-06 A7T
MWI 30-06 A7T
50
R
0.1
G
I
C
t
60
1
60
70
t
t
E
d(off)
f
MWI3006A7
t
t
diode
IGBT
off
d(off)
f
s
A
Ω
80
10
20070912a
400
300
200
100
0
400
300
200
100
0
ns
ns
4 - 4
t
t