IXSN55N120AU1 IXYS, IXSN55N120AU1 Datasheet
IXSN55N120AU1
Manufacturer Part Number
IXSN55N120AU1
Description
IGBT 80A 1200V SOT-227B
Manufacturer
IXYS
Datasheet
1.IXSN55N120AU1.pdf
(2 pages)
Specifications of IXSN55N120AU1
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
4V @ 15V, 55A
Current - Collector (ic) (max)
110A
Current - Collector Cutoff (max)
1mA
Input Capacitance (cies) @ Vce
8nF @ 25V
Power - Max
500W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Channel Type
N
Collector-emitter Voltage
1.2kV
Gate To Emitter Voltage (max)
±20V
Mounting
Screw
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXSN55N120AU1
Manufacturer:
IXYS
Quantity:
500
© 2000 IXYS All rights reserved
High Voltage
IGBT with Diode
Short Circuit SOA Capability
Preliminary data
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
t
(SCSOA)
P
P
V
T
T
T
M
Symbol
BV
V
I
I
V
IXYS reserves the right to change limits, test conditions, and dimensions.
C25
C90
CM
CES
GES
SC
J
JM
stg
CGR
C
D
CES
GES
GEM
ISOL
GE(th)
CE(sat)
d
CES
Test Conditions
T
T
Continuous
Transient
T
T
T
V
Clamped inductive load, L = 30 mH
V
R
T
50/60 Hz
I
Mounting torque
Terminal connection torque (M4)
Test Conditions
I
I
V
V
V
I
C
C
C
ISOL
C
C
C
C
J
J
GE
GE
CE
GE
CE
G
= 22 W, non repetitive
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 90°C
= 25°C, 1 ms
= 15 V, T
= 15 V, V
= 25°C
£ 1 mA
= 8 mA, V
= 8 mA, V
= 0.8 • V
= 0 V
= 0 V, V
= I
C90
, V
GE
GE
VJ
CE
CES
GE
CE
= 125°C, R
= 15 V
= 0.6 • V
= ±20 V
= V
= 0 V
GE
IGBT
Diode
t = 1 min
t = 1 s
GE
CES
= 1 MW
G
, T
= 22 W
T
T
J
J
J
= 125°C
(T
= 25°C
= 125°C
J
= 25°C, unless otherwise specified)
IXSN 55N120AU1
1200
min.
Characteristic Values
4
-55 ... +150
-55 ... +150
@ 0.8 V
Maximum Ratings
I
CM
typ.
1.5/13
1.5/13
= 110
1200
1200
2500
3000
±20
±30
110
160
500
175
150
CES
10
55
2
4
max.
±200
16
Nm/lb.in.
Nm/lb.in.
8
1
4
3
1
mA
mA
nA
V~
V~
°C
°C
°C
ms
W
W
V
A
V
V
A
A
A
A
V
V
V
miniBLOC, SOT-227 B
Features
• International standard package
• Aluminium-nitride isolation
• Isolation voltage 3000 V~
• Low V
• Fast Recovery Epitaxial Diode
• Low collector-to-case capacitance
• Low package inductance (< 10 nH)
Applications
• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptible power supplies (UPS)
• Switch-mode and resonant-mode
Advantages
• Space savings
• Easy to mount with 2 screws
• High power density
miniBLOC (ISOTOP) compatible
- high power dissipation
- for minimum on-state conduction
- short t
(< 60 pF)
- reduces RFI
- easy to drive and to protect
power supplies
losses
V
I
V
C25
2
CES
CE(sat)
CE(sat)
rr
and I
1
RM
3
= 1200 V
=
=
4
92520E(12/96)
110 A
4 V
1 - 2
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IXSN55N120AU1 Summary of contents
Page 1
... V CES CE CES ± GES CE(sat) C C90 GE IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved IXSN 55N120AU1 2 4 Maximum Ratings 1200 = 1 MW 1200 GE ±20 ±30 110 55 160 = 110 0.8 V CES , T = 125°C ...
Page 2
... Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. /dt = 480 A/ 100°C 300 25° IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 4,850,072 4,931,844 5,034,796 IXSN 55N120AU1 miniBLOC, SOT-227 B max screws (4x) supplied nC Dim. ...