MUBW15-06A7 IXYS, MUBW15-06A7 Datasheet - Page 7

• Manufacturer Part Number: MUBW15-06A7
• Description: MODULE IGBT CBI E2
• Manufacturer: IXYS

Specifications of MUBW15-06A7

• Igbt Type: NPT
• Configuration: Three Phase Inverter with Brake
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.3V @ 15V, 15A
• Current - Collector (ic) (max): 25A
• Current - Collector Cutoff (max): 600µA
• Input Capacitance (cies) @ Vce: 0.8nF @ 25V
• Power - Max: 100W
• Input: Three Phase Bridge Rectifier
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: E2
• Channel Type: N
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 25A
• Gate To Emitter Voltage (max): ±20V
• Package Type: E2-Pack
• Pin Count: 24
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Vrrm, Rect 1/3 Ph., (v): 1600
• Idavm, Tc = 80°c, Rect 1/3 Ph., (a): 18
• Rthjc, Typ, Rect 1/3 Ph., (k/w): 1.47
• Vces, Inv 3 - Ph., (v): 600
• Ic25, Tc = 25°c, Inv 3 - Ph., (a): 25
• Ic80, Tc = 80°c, Inv 3 - Ph., (a): 18
• Vce(sat), Typ, Tj = 25°c, Inv 3 - Ph., (v): 1.9
• Rthjc, Typ, Inv 3 - Ph., (k/w): 1.3
• Vces, Br Chopper, (v): 600
• Ic80, Tc = 80°c, Br Chopper, (a): 15
• Rthjc, Typ, Br Chopper, (k/w): 1.5
• Package Style: E2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2001 IXYS All rights reserved
Output Inverter T1 - T6 / D1 - D6
E
E
I
CM
on
on
2.0
1.5
1.0
0.5
0.0
mJ
mJ
40
30
20
10
A
3
2
1
0
0
0
0
0
Fig. 13 Typ. turn on energy and switching
Fig. 15 Typ. turn on energy and switching
Fig. 17 Reverse biased safe operating area
V
V
R
T
R
T
V
V
I
T
VJ
CE
GE
G
C
VJ
G
VJ
CE
GE
= 68
100
= 300V
= ±15V
= 68
= 125°C
= 125°C
= 15A
= 300V
= ±15V
= 125°C
20
times versus collector current
times versus gate resistor
RBSOA
200
10
40
300
60
d(on)
r
E
on
d(on)
400
20
R
80
I
G
C
500
E
on
100
V
CE
600
30
r
A
120
700
60
40
20
0
60
45
30
15
0
ns
ns
V
t
t
Z
E
E
0.0001
thJC
off
off
0.001
0.01
K/W
2.0
mJ
1.5
1.0
0.5
0.0
0.8
0.6
0.4
0.2
0.0
0.1
mJ
0.00001 0.0001 0.001
10
1
0
0
Fig. 14 Typ. turn off energy and switching
Fig.16 Typ. turn off energy and switching
Fig. 18 Typ. transient thermal impedance
V
V
I
T
C
VJ
CE
GE
= 15A
= 300V
= ±15V
= 125°C
20
single pulse
times versus collector current
times versus gate resistor
10
40
0.01
60
MUBW 15-06 A7
20
E
off
R
d(off)
0.1
f
80
G
I
C
t
V
V
R
T
VJ
CE
GE
G
100
= 300V
= 68
= ±15V
= 125°C
1
30
MUBW1506A7
E
diode
IGBT
off
d(off)
f
s
A
120
10
400
300
200
100
0
400
ns
300
200
100
0
ns
7 - 8
t
t