IXDN75N120 IXYS, IXDN75N120 Datasheet - Page 3

• Manufacturer Part Number: IXDN75N120
• Description: IGBT 1200V 150A SOT-227B
• Manufacturer: IXYS

Specifications of IXDN75N120

• Igbt Type: NPT
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 75A
• Current - Collector (ic) (max): 150A
• Current - Collector Cutoff (max): 4mA
• Input Capacitance (cies) @ Vce: 5.5nF @ 25V
• Power - Max: 660W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Vces, (v): 1200
• Ic25, Tc=25°c, Igbt, (a): 150
• Ic90, Tc=90°c, Igbt, (a): 95
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.7
• Tfi, Typ, Igbt, (ns): 50
• Eoff, Typ, Tj=125°c, Igbt, (mj): 10.5
• Rthjc, Max, Igbt, (°c/w): 0.19
• If, Tc=90°c, Diode, (a): -
• Rthjc, Max, Diode, (k/w): -
• Package Style: SOT-227B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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I
V
I
C
C
GE
150
125
100
175
150
125
100
A
75
50
25
20
15
10
A
75
50
25
V
0
5
0
0
0.0
5
0
Fig. 1 Typ. output characteristics
Fig. 3 Typ. transfer characteristics
Fig. 4 Typ. turn on gate charge
T
V
T
J
V
I
CE
J
C
= 25°C
= 25°C
CE
= 20V
0.5
= 600V
= 75A
6
100
1.0
7
200
1.5
8
2.0
9
300
V
V
CE
GE
2.5
10
Q
G
400
V
GE
3.0
11
IXDN75N120
=17V
13V
11V
9V
15V
V
V
nC
I
I
I
F
RM
C
175
150
125
100
300
250
200
150
100
120
A
A
75
50
25
50
80
40
A
0
0
0
0.0
0
0
Fig. 2 Typ. output characteristics
T
J
= 125°C
0.5
200
1.0
I
1
RM
t
rr
1.5
400
2.0
2
T
J
IXDN 75N120
600
= 125°C
2.5
V
V
-di/dt
CE
T
V
I
F
F
3.0
J
R
3
= 125°C
= 75A
= 600V
800
A/
T
V
J
m
GE
3.5
= 25°C
s
=17V
V
15V
13V
11V
9V
V
1000
4
300
200
100
0
ns
3 - 4
t
rr