MWI25-12E7 IXYS, MWI25-12E7 Datasheet - Page 4

• Manufacturer Part Number: MWI25-12E7
• Description: MOD IGBT SIXPACK RBSOA 1200V E2
• Manufacturer: IXYS

Specifications of MWI25-12E7

• Configuration: Three Phase Inverter
• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 25A
• Current - Collector (ic) (max): 52A
• Current - Collector Cutoff (max): 400µA
• Input Capacitance (cies) @ Vce: 2nF @ 25V
• Power - Max: 225W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: E2
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 52A
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2004 IXYS All rights reserved
E
E
on
on
mJ
20
16
12
mJ
70
60
50
40
30
20
10
8
4
0
8
6
4
2
0
0
10
0
0
Fig. 11 Typ. turn off characteristics
Fig. 7
Fig. 9
V
V
I
T
T
I
V
C
F
VJ
V
V
T
I
CE
GE
VJ
F
R
CE
GE
j
=35A
=125°C
200
= 600 V
= ±15 V
=600V
=+-15V
= 35 A
= 125°C
= 125°C
= 30 A
= 600 V
20
Typ. turn on energy and switching
times versus gate resistor
20
400
of free wheeling diode
Typ. turn on energy and switching
times versus collector current
30
600
E on
E
40
t d(on)
rec(off)
t r
75Ω
40
75Ω
800
-di
F
/dt [A/µs]
50
1000
56Ω
E on
56Ω
R
I
G
C
60
39Ω
39Ω
60
t d(on)
V
V
R
T
1200
E
VJ
CE
GE
G
rec(off)
24Ω
R
= 600 V
= 39 Ω
t r
= ±15 V
= 125°C
24Ω
G
70
=
A
1400
Ω
15Ω
15Ω
80
80
1600
100
90
80
70
60
50
40
30
20
10
0
160
120
80
40
0
ns
ns
I
t
RM
RR
1800
t
t
350
300
250
200
150
100
50
0
E
E
off
off
mJ
mJ
6
4
2
0
4
3
2
1
0
12
10
10
8
6
4
2
0
0
Fig. 8
Fig.10
0
Fig. 12 Typ. turn off characteristics
t
V
V
I
T
E
C
d(off)
CE
GE
VJ
off
V
V
R
T
T
V
CE
GE
VJ
G
= 600 V
VJ
= ±15 V
R
= 35 A
= 125°C
200
20
= 39 Ω
= 600 V
= ±15 V
= 125°C
= 600 V
= 125°C
20
Typ. turn off energy and switching
times versus collector current
Typ. turn off energy and switching
times versus gate resistor
400
of free wheeling diode
30
600
75 Ω
40
56 Ω
40
800
-di
7,5A
F
39 Ω
/dt [A/µs]
MWI 25-12 E7
R
G
50
=
1000
15A
R
24 Ω
G
I
60
C
1200
60
15 Ω
I
F
=
1400
70
70A
A
t
E
d(off)
t
Ω
f
off
1600
t
50A
f
80
80
35A
1200
1000
800
600
400
200
0
800
600
400
200
0
ns
ns
4 - 4
1800
t
t