IXGE200N60B IXYS, IXGE200N60B Datasheet - Page 2

• Manufacturer Part Number: IXGE200N60B
• Description: IGBT 600V ISOPLUS227
• Manufacturer: IXYS
• Series: HiPerFAST™r

Specifications of IXGE200N60B

• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.3V @ 15V, 120A
• Current - Collector (ic) (max): 160A
• Current - Collector Cutoff (max): 200µA
• Input Capacitance (cies) @ Vce: 11nF @ 25V
• Power - Max: 416W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: ISOPLUS227™
• Channel Type: N
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 160A
• Gate To Emitter Voltage (max): ±20V
• Package Type: ISOPLUS 227
• Pin Count: 4
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 175
• Ic90, Tc=90°c, Igbt, (a): 112
• Ic110, Tc=110°c, Igbt, (a): -
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.1
• Tfi, Typ, Tj=25°c, Igbt, (ns): 160
• Eoff, Typ, Tj=125°c, Igbt, (mj): 8.7
• Rthjc, Max, Igbt, (°c/w): 0.25
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): -
• Package Style: ISOPLUS227™
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol
g
C
C
C
Q
Q
Q
t
t
E
t
t
E
t
t
E
t
t
E
R
R
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
d(on)
d(off)
d(on)
d(off)
ri
fi
ri
fi
fs
on
off
on
off
ies
oes
thJC
thCK
res
g
ge
gc
Inductive load, T
I
V
Remarks: Switching times
may increase for
V
higher T
Inductive load, T
I
V
Remarks: Switching times
may increase for V
C
C
higher T
Test Conditions
I
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
V
I
CE
CE
CE
C
C
= 100A, V
=100A, V
CE
= 120A, V
= 0.8 V
= 0.8 V
(Clamp) > 0.8 • V
= 25 V, V
= 60 A; V
J
J
or increased R
or increased R
CES
CES
GE
GE
GE
= 15 V
, R
GE
, R
= 15 V
CE
= 15 V, V
= 0 V, f = 1 MHz
G
G
4,835,592
4,850,072
4,881,106
= 10 V,
J
J
= R
= R
= 25° ° ° ° ° C
= 125° ° ° ° ° C
CE
CES
(Clamp) > 0.8 • V
off
off
= 2.4 Ω
= 2.4 Ω
,
CE
G
G
4,931,844
5,017,508
5,034,796
= 0.5 V
(T
J
= 25°C, unless otherwise specified)
CES
5,049,961
5,063,307
5,187,117
CES
,
5,237,481
5,381,025
5,486,715
min.
50
Characteristic Values
11000
0.07
typ.
680
190
350
131
200
160
290
250
6,162,665
6,259,123 B1
6,306,728 B1
2.4
5.5
4.8
8.7
75
72
60
45
60
60
max.
360
280
9.6 mJ
0.3 K/W
6,404,065 B1
6,534,343
6,583,505
K/W
mJ
mJ
mJ
nC
nC
nC
pF
pF
pF
n s
n s
n s
n s
n s
n s
n s
n s
S
Please see IXGN200N60B data
sheet for characteristic curves.
SOT-227B miniBLOC
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
IXGE 200N60B