MWI60-12T6K IXYS, MWI60-12T6K Datasheet - Page 2

• Manufacturer Part Number: MWI60-12T6K
• Description: MOD IGBT SIXPACK RBSOA 1200V E1
• Manufacturer: IXYS

Specifications of MWI60-12T6K

• Igbt Type: Trench
• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.3V @ 15V, 35A
• Current - Collector (ic) (max): 58A
• Current - Collector Cutoff (max): 500µA
• Input Capacitance (cies) @ Vce: 2.53nF @ 25V
• Power - Max: 200W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: E1
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 58A
• Gate To Emitter Voltage (max): ±20V
• Pin Count: 24
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Vces, (v): 1200
• Ic25, Tc = 25°c, Igbt, (a): 58
• Ic80, Tc = 80°c, Igbt, (a): 41
• Vce(sat), Typ, Tj = 25°c, Igbt, (v): 1.9
• Eoff, Typ, Tj = 125°c, Igbt, (mj): 4.8
• Rthjc, Max, Igbt, (k/w): 0.62
• If25, Tc = 25°c, Diode, (a): 49
• If80, Tc = 80°c, Diode, (a): 32
• Package Style: E1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
Symbol
V
V
V
I
I
P
V
V
I
I
C
Q
t
t
t
t
E
E
I
t
(SCSOA)
R
R
Diodes
Symbol
V
I
I
Symbol
V
I
t
R
R
RM
IGBTs
C25
C80
CES
GES
d(on)
r
d(off)
f
CM
SC
F25
F80
rr
GES
GEM
GE(th)
F
CES
tot
CE(sat)
ies
on
off
thJC
thCH
RRM
thJC
thCH
G(on)
Definitions
collector emitter voltage
max. DC gate voltage
max. transient collector gate voltage
collector current
total power dissipation
collector emitter saturation voltage
gate emitter threshold voltage
collector emitter leakage current
gate emitter leakage current
input capacitance
total gate charge
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
reverse bias safe operating area
short circuit safe operating area
thermal resistance junction to case
thermal resistance case to heatsink
Definitions
max. repetitive reverse voltage
forward current
Conditions
forward voltage
max. reverse recovery current
reverse recovery time
thermal resistance junction to case
thermal resistance case to heatsink
I
V
di
(per diode)
(per diode)
Conditions
continuous
transient
I
I
V
V
V
V
inductive load
V
V
RBSOA; V
L = 00 µH; clamped induct. load T
V
V
R
(per IGBT)
(per IGBT)
Conditions
C
C
F
CE
CE
CE
CE
CE
GE
CEmax
CE
R
G
F
= 35 A
= 35 A; V
= .5 mA; V
/dt = -600 A/µs
= 600 V; I
= 27 W; non-repetitive
= V
= 0 V; V
= 25 V; V
= 600 V; V
= 600 V; I
= ±5 V; R
= 900 V; V
= V
CES
CES
; V
GE
GE
GE
GE
F
GE
= ±5 V; R
- L
C
= 5 V
GE
= 35 A
GE
GE
G
= ±20 V
= 0 V
= 35 A
= 0 V; f =  MHz
S
= 27 W
= V
= 5 V; I
·di/dt
= ±5 V;
CE
G
C
= 27 W
T
= 35 A
VJ
= 25°C to 50°C
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
VJ
VJ
VJ
VJ
C
C
C
VJ
VJ
VJ
VJ
VJ
VJ
VJ
VJ
C
C
= 25°C
= 80°C
= 25°C
= 80°C
= 25°C
= 25°C
= 25°C
= 25°C
= 25°C
= 25°C
= 25°C
= 25°C
= 25°C
= 25°C
= 00°C
= 25°C
= 25°C
MWI 60-12T6K
min.
min.
4.5
Characteristic Values
2530
0.25
Maximum Ratings
typ.
Ratings
typ.
50
330
520
.9
2.2
0.8
3.5
4.8
2.6
.8
0.3
90
50
90
70
0
35
max.
max.
200
600
0.62
±20
±30
200
400
2.3
6.5
0.5
2.9
0.9
58
4
49
32
20073a
2 - 4
Unit
K/W
K/W
K/W
K/W
mA
mA
mJ
mJ
nC
nA
pF
ns
ns
ns
ns
ns
µs
W
V
V
A
V
V
V
A
A
V
V
V
A
V
A
A