MWI25-12A7T IXYS, MWI25-12A7T Datasheet - Page 2

• Manufacturer Part Number: MWI25-12A7T
• Description: MOD IGBT SIXPACK RBSOA 1200V E2
• Manufacturer: IXYS

Specifications of MWI25-12A7T

• Configuration: Three Phase Inverter
• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 25A
• Current - Collector (ic) (max): 50A
• Current - Collector Cutoff (max): 2mA
• Input Capacitance (cies) @ Vce: 1.65nF @ 25V
• Power - Max: 225W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: E2
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Package Type: E2-Pack
• Pin Count: 24
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Vces, (v): 1200
• Ic25, Tc = 25°c, Igbt, (a): 50
• Ic80, Tc = 80°c, Igbt, (a): 35
• Vce(sat), Typ, Tj = 25°c, Igbt, (v): 2.2
• Eoff, Typ, Tj = 125°c, Igbt, (mj): 2.8
• Rthjc, Max, Igbt, (k/w): 0.55
• If25, Tc = 25°c, Diode, (a): 50
• If80, Tc = 80°c, Diode, (a): 33
• Package Style: E2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions and dimensions.
© 2008 IXYS All rights reserved
IGBTs
Symbol
V
V
V
I
I
P
V
V
I
I
C
Q
t
t
t
t
E
E
I
t
(SCSOA)
R
Diodes
Symbol
V
I
I
V
I
t
E
R
C25
C80
CES
GES
d(on)
r
d(off)
f
CM
SC
F25
F80
RM
rr
GES
GEM
GE(th)
CES
tot
CE(sat)
ies
on
off
thJC
RRM
F
rec(off)
thJC
G(on)
Definitions
collector emitter voltage
max. DC gate voltage
max. transient collector gate voltage
collector current
total power dissipation
collector emitter saturation voltage
gate emitter threshold voltage
collector emitter leakage current
gate emitter leakage current
input capacitance
total gate charge
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
reverse bias safe operating area
short circuit safe operating area
thermal resistance junction to case
Definitions
max. repetitve reverse voltage
forward current
forward voltage
max. reverse recovery current
reverse recovery time
reverse recovery energy
thermal resistance junction to case
Conditions
continuous
transient
I
I
V
V
V
V
inductive load
V
V
RBSOA; V
L = 100 µH; clamped induct. load T
V
V
R
(per IGBT)
Conditions
I
V
di
(per diode)
I
C
C
F
F
CE
CE
CE
CE
CE
GE
CEmax
CE
R
G
F
= 25 A; V
= 25 A; V
= 1 mA; V
= 25 A; V
/dt = -400 A/µs
= 600 V
= 47 W; non-repetitive
= V
= 0 V; V
= 25 V; V
= 600 V; V
= 600 V; I
= ±15 V; R
= V
= V
CES
CES
CES
; V
; V
GE
GE
GE
GE
GE
GE
GE
GE
GE
= ±15 V; R
- L
C
= 0 V
= 15 V
GE
= 0 V
= V
G
= ±20 V
= 0 V
= 25 A
= ±15 V;
= 0 V; f = 1 MHz
S
= 47 W
= 15 V; I
·di/dt
CE
G
C
= 47 W
T
= 35 A
VJ
= 25°C to 150°C
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
C
C
C
VJ
VJ
VJ
VJ
VJ
VJ
VJ
VJ
VJ
C
C
VJ
VJ
VJ
C
= 25°C unless otherwise stated
= 25°C
= 80°C
= 25°C
= 25°C
= 125°C
= 25°C
= 25°C
= 125°C
= 125°C
= 125°C
= 150°C
= 25°C
= 80°C
= 25°C
= 125°C
= 125°C
= 125°C
MWI 25-12A7(T)
min.
min.
4.5
1650
Ratings
typ.
Ratings
typ.
120
100
500
200
2.2
2.6
3.8
2.8
2.3
1.7
1.3
70
70
70
10
20
2
max.
1200
max.
1200
0.55
1.19
±20
±30
225
200
2.7
6.5
2.7
50
35
50
33
2
20080805a
2 - 6
Unit
Unit
K/W
K/W
mA
mA
mJ
mJ
mJ
nC
nA
pF
ns
ns
ns
ns
µs
ns
W
V
V
V
A
A
V
V
V
A
V
A
A
V
V
A