MWI35-12A7 IXYS, MWI35-12A7 Datasheet - Page 2

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MWI35-12A7

Manufacturer Part Number
MWI35-12A7
Description
MOD IGBT SIXPACK RBSOA 1200V E2
Manufacturer
IXYS
Datasheet

Specifications of MWI35-12A7

Igbt Type
NPT
Configuration
Three Phase Inverter
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.8V @ 15V, 35A
Current - Collector (ic) (max)
62A
Current - Collector Cutoff (max)
2mA
Input Capacitance (cies) @ Vce
2nF @ 25V
Power - Max
280W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
E2
Vces, (v)
1200
Ic25, Tc = 25°c, Igbt, (a)
62
Ic80, Tc = 80°c, Igbt, (a)
44
Vce(sat), Typ, Tj = 25°c, Igbt, (v)
2.2
Eoff, Typ, Tj = 125°c, Igbt, (mj)
4.2
Rthjc, Max, Igbt, (k/w)
0.44
If25, Tc = 25°c, Diode, (a)
50
If80, Tc = 80°c, Diode, (a)
33
Package Style
E2
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MWI35-12A7
Manufacturer:
MITSUBISHI
Quantity:
292
Part Number:
MWI35-12A7T
Manufacturer:
ERICSSON
Quantity:
1 000
Part Number:
MWI35-12A7T
Quantity:
60
Part Number:
MWI35-12A7T
Quantity:
60
Symbol
I
I
Symbol
V
I
t
R
Symbol
R
B
Symbol
T
T
V
M
Symbol
R
d
d
R
Weight
© 2007 IXYS All rights reserved
Diodes
F25
F80
RM
Temperature Sensor NTC (MWI ... A7T version only)
Module
rr
VJ
stg
S
A
F
ISOL
thJC
25
25/50
pin-chip
thCH
d
Conditions
T
T
Conditions
I
I
V
(per diode)
Conditions
T = 25°C
Conditions
I
Mounting torque (M5)
Conditions
Creepage distance on surface
Strike distance in air
with heatsink compound
F
F
ISOL
C
C
R
= 35 A; V
= 35 A; di
= 25°C
= 80°C
= 600 V; V
≤ 1 mA; 50/60 Hz
GE
F
/dt = -400 A/µs; T
GE
= 0 V; T
= 0 V
T
VJ
VJ
= 25°C
= 125°C
VJ
= 125°C
min.
min.
min.
4.75
Characteristic Values
Characteristic Values
Characteristic Values
6
6
-40...+150
-40...+125
Maximum Ratings
Maximum Ratings
2.7 - 3.3
0.02
3375
180
200
typ.
typ.
typ.
1.9
5
20
5.0
2500
50
33
max.
max.
max.
1.19 K/W
5.25 kΩ
2.8
Nm
K/W
mm
mm
V~
°C
°C
ns
A
A
V
V
A
K
g
Dimensions in mm (1 mm = 0.0394")
Higher magnification on page B3 - 72
Conduction
IGBT (typ. at V
Free Wheeling Diode (typ. at T
Thermal Response
IGBT (typ.)
Free Wheeling Diode (typ.)
Equivalent Circuits for Simulation
C
C
C
C
th1
th2
th1
th2
= 0.166 J/K; R
= 1.921 J/K; R
= 0.081 J/K; R
= 0.915 J/K; R
V
V
0
0
= 1.3 V; R
= 1.6 V; R
MWI 35-12 A7
GE
= 15 V; T
0
0
th1
th2
th1
th2
= 24.9 m Ω
= 28 m Ω
= 0.342 K/W
= 0.098 K/W
= 0.973 K/W
= 0.217 K/W
J
= 125°C)
J
= 125°C)
20070912a
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