MUBW25-12T7 IXYS, MUBW25-12T7 Datasheet - Page 2

• Manufacturer Part Number: MUBW25-12T7
• Description: MODULE IGBT CBI E2
• Manufacturer: IXYS

Specifications of MUBW25-12T7

• Igbt Type: Trench
• Configuration: Three Phase Inverter with Brake
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.15V @ 15V, 25A
• Current - Collector (ic) (max): 45A
• Current - Collector Cutoff (max): 2.7mA
• Input Capacitance (cies) @ Vce: 1.8nF @ 25V
• Power - Max: 170W
• Input: Three Phase Bridge Rectifier
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: E2
• Vrrm, Rect 1/3 Ph., (v): 1600
• Idavm, Tc = 80°c, Rect 1/3 Ph., (a): 25
• Rthjc, Typ, Rect 1/3 Ph., (k/w): 1.3
• Vces, Inv 3 - Ph., (v): 1200
• Ic25, Tc = 25°c, Inv 3 - Ph., (a): 45
• Ic80, Tc = 80°c, Inv 3 - Ph., (a): 25
• Vce(sat), Typ, Tj = 25°c, Inv 3 - Ph., (v): 1.7
• Rthjc, Typ, Inv 3 - Ph., (k/w): 0.73
• Vces, Br Chopper, (v): 1200
• Ic80, Tc = 80°c, Br Chopper, (a): 15
• Rthjc, Typ, Br Chopper, (k/w): 1.05
• Package Style: E2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
V
V
I
I
I
P
Symbol
V
V
I
I
C
Q
t
t
t
t
E
E
RBSOA
I
(SCSOA)
R
Symbol
I
I
Symbol
V
I
Q
t
E
R
© 2006 IXYS All rights reserved
Output Inverter T1 - T6
C25
C80
CM
CES
GES
d(off)
SC
Output Inverter D1 - D6
F25
F80
RM
d(on)
r
f
rr
GES
tot
CE(sat)
GE(th)
on
off
F
CES
ies
Gon
thJC
rec
thJC
rr
Conditions
T
Continuous
T
T
T
T
Conditions
I
I
V
V
V
V
I
R
V
t
(per IGBT)
Conditions
T
T
Conditions
I
I
V
(per diode)
Inductive load, T
V
V
C
C
C
p
F
F
VJ
C
C
C
C
C
C
CE
CE
CE
CE
CE
R
CE
GE
G
< 10 µs; non-repetitive; T
= 25 A; V
= tbd A; di
= 25 A; V
= 1 mA; V
= I
= 80°C; t
= 25°C
= 80°C
= 25°C
= 25°C
= 80°C
= 600 V; V
= 600 V; V
= 36 Ω; T
= 25°C to 150°C
= V
= 720 V; V
= 0 V; V
= 25 V; V
= 600 V; I
= ± 15 V; R
CM
; V
CES
GE
; V
GE
GE
= ± 15 V
GE
GE
F
p
GE
VJ
/dt = -tbd A/µs; T
GE
= 1 ms
= 0 V; T
GE
C
= 15 V; T
GE
GE
= V
= ± 20 V
= 0 V; T
G
= 125°C
= 25 A
= 0 V; f = 1 MHz
= 0 V
= 15 V; I
= 36 Ω
= ± 15 V; R
VJ
CE
= 125°C
T
T
T
VJ
VJ
VJ
VJ
VJ
VJ
C
= 25°C
= 25°C
= 125°C
=
= 125°C
= 125°C
= 25 A
VJ
G
25°C
= 36 Ω;
= 125°C
VJ
(T
= 125°C
VJ
= 25°C, unless otherwise specified)
min.
min.
V
Characteristic Values
Characteristic Values
5
CEK
Maximum Ratings
Maximum Ratings
< V
240
520
100
typ.
typ.
1.7
2.0
5.8
0.7
1.8
2.5
3.4
2.1
1.6
tbd
tbd
tbd
tbd
90
50
90
CES
- L
1200
± 20
2.15
0.73 K/W
max.
max.
170
400
S
2.7 mA
6.5
2.6
2.1 K/W
45
25
25
17
50
di/dt
mA
nC
mJ
mJ
µC
mJ
nA
nF
ns
ns
ns
ns
ns
W
V
V
A
A
A
V
V
V
V
A
A
A
V
V
A
Conduction
IGBT (typ. at V
T1-T6
T7
Diode (typ. at T
D1-D6
D7
D11-D16
Thermal Response
IGBT (typ.)
T1-T6
T7
Diode (typ.)
D1-D6
D7
D11-D16
Equivalent Circuits for Simulation
C
C
C
C
C
C
C
C
C
C
V
th1
th2
th1
th2
th1
th2
th1
th2
th1
th2
V
V
V
V
0
0
0
0
0
MUBW 25-12 T7
= 0.92 V; R
= tbd J/K; R
= tbd J/K; R
= tbd J/K; R
= tbd J/K; R
= tbd J/K; R
= tbd J/K; R
= tbd J/K; R
= tbd J/K; R
= tbd J/K; R
= tbd J/K; R
= 0.92 V; R
= tbd V; R
= tbd V; R
= tbd V; R
GE
J
= 125°C)
= 15 V; T
0
0
0
0
th1
th2
th1
th2
th1
th2
th1
th2
th1
th2
0
= 42.8 m Ω
= tbd m Ω
= tbd m Ω
= tbd m Ω
= 72 m Ω
= tbd K/W
= tbd K/W
= tbd K/W
= tbd K/W
= tbd K/W
= tbd K/W
= tbd K/W
= tbd K/W
= tbd K/W
= tbd K/W
J
= 125°C)
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