CM50DU-24F Powerex Inc, CM50DU-24F Datasheet - Page 2

• Manufacturer Part Number: CM50DU-24F
• Description: IGBT MOD DUAL 1200V 50A F SER
• Manufacturer: Powerex Inc
• Series: IGBTMOD™r
• Type: IGBT Moduler

Specifications of CM50DU-24F

• Igbt Type: Trench
• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 50A
• Current - Collector (ic) (max): 50A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 20nF @ 10V
• Power - Max: 320W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: Module
• Transistor Polarity: N Channel
• Dc Collector Current: 50A
• Collector Emitter Voltage Vces: 1.2kV
• Power Dissipation Pd: 320W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To +150°C
• Prx Availability: RequestQuote
• Voltage: 1200V
• Current: 50A
• Circuit Configuration: Dual
• Rohs Compliant: Yes
• Recommended Gate Driver: VLA504
• Recommended Dc To Dc Converter: VLA106-15242 or VLA106-24242
• Interface Circuit Ref Design: BG2B or BG2C-3015
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]
CM50DU-24F
Trench Gate Design Dual IGBTMOD™
50 Amperes/1200 Volts
Absolute Maximum Ratings, T j = 25°C unless otherwise specified
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage (C-E SHORT)
Collector Current (T c = 25°C)
Peak Collector Current
Emitter Current** (T c = 25°C)
Peak Emitter Current**
Maximum Collector Dissipation (T c = 25°C, T j ≤ 150°C)
Mounting Torque, M5 Main Terminal
Mounting Torque, M6 Mounting
Weight
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
Static Electrical Characteristics, T j = 25°C unless otherwise specified
Characteristics
Collector-Cutoff Current
Gate Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Total Gate Charge
Emitter-Collector Voltage**
* Pulse width and repetition rate should be such that the device junction temperature (T j ) does not exceed T j(max) rating.
** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
V CE(sat)
V GE(th)
Symbol
I GES
I CES
V EC
Q G
V CC = 600V, I C = 50A, V GE = 15V
I C = 50A, V GE = 15V, T j = 125°C
I C = 50A, V GE = 15V, T j = 25°C
V CE = V CES , V GE = 0V
V GE = V GES , V CE = 0V
I C = 5mA, V CE = 10V
I E = 50A, V GE = 0V
Test Conditions
Symbol
V GES
V CES
T stg
I CM
V iso
I EM
P c
I C
I E
T j
–
–
–
CM50DU-24F
Min.
-40 to 150
-40 to 125
–
–
5
–
–
–
–
1200
2500
100*
±20
100*
320
310
50
50
31
40
550
Typ.
–
–
6
1.8
1.9
–
20
Max.
1
7
2.4
–
–
3.2
Amperes
Amperes
Amperes
Amperes
Grams
Watts
Volts
Volts
Volts
Units
Units
in-lb
in-lb
°C
°C
Volts
Volts
Volts
Volts
mA
μA
nC