MUBW50-06A8 IXYS, MUBW50-06A8 Datasheet - Page 5

• Manufacturer Part Number: MUBW50-06A8
• Description: MODULE IGBT CBI E3
• Manufacturer: IXYS

Specifications of MUBW50-06A8

• Igbt Type: NPT
• Configuration: Three Phase Inverter with Brake
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.3V @ 15V, 50A
• Current - Collector (ic) (max): 75A
• Current - Collector Cutoff (max): 800µA
• Input Capacitance (cies) @ Vce: 2.8nF @ 25V
• Power - Max: 250W
• Input: Three Phase Bridge Rectifier
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: E3
• Channel Type: N
• Collector-emitter Voltage: 600V
• Gate To Emitter Voltage (max): ±20V
• Pin Count: 24
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Vrrm, Rect 1/3 Ph., (v): 1600
• Idavm, Tc = 80°c, Rect 1/3 Ph., (a): 120
• Rthjc, Typ, Rect 1/3 Ph., (k/w): 1.06
• Vces, Inv 3 - Ph., (v): 600
• Ic25, Tc = 25°c, Inv 3 - Ph., (a): 75
• Ic80, Tc = 80°c, Inv 3 - Ph., (a): 50
• Vce(sat), Typ, Tj = 25°c, Inv 3 - Ph., (v): 1.9
• Rthjc, Typ, Inv 3 - Ph., (k/w): 0.50
• Vces, Br Chopper, (v): 600
• Ic80, Tc = 80°c, Br Chopper, (a): 25
• Rthjc, Typ, Br Chopper, (k/w): 1.00
• Package Style: E3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2007 IXYS All rights reserved
Z
Input Rectifier Bridge D11 - D16
P
I
F
thJC
tot
120
450
400
350
300
250
200
150
100
K/W
W
1.2
1.0
0.8
0.6
0.4
0.2
0.0
90
60
30
50
0.001
A
0
0
0
0
Fig. 1 Forward current versus
Fig. 4
Fig. 6 Transient thermal impedance junction to case
T
T
VJ
VJ
voltage drop per diode
Power dissipation versus direct output current and ambient temperature, sin 180°
= 125°C
= 25°C
40
1
0.01
80
V
2
F
V
I
d(AV)M
120
3
A
0.1
I
FSM
500
400
300
200
100
0
A
0.001
0
Fig. 2 Surge overload current
20
50Hz, 80% V
T
VJ
40
= 150°C
0.01
60
RRM
T
1
80 100 120 140
VJ
= 45°C
T
amb
0.1
t
0.05 K/W
0.15 K/W
t
R
0.3 K/W
0.5 K/W
thA
s
1 K/W
2 K/W
5 K/W
s
:
DWN 21
°C
1
10
I
d(AV)
I
2
t
140
120
100
10
A
10
10
A
80
60
40
20
2
0
s
4
3
2
1
0
Fig. 3 I
Fig. 5 Max. forward current
MUBW 50-06 A8
20 40 60 80 100 120 140
T
T
VJ
VJ
= 150°C
versus case temperature
2
= 45°C
t versus time per diode
2
3
4 5 6 7 8 9
T
C
t
20070921a
ms
5 - 8
°C
10