MWI50-12T7T IXYS, MWI50-12T7T Datasheet - Page 3

• Manufacturer Part Number: MWI50-12T7T
• Description: MOD IGBT SIX-PACK RBSOA E2
• Manufacturer: IXYS

Specifications of MWI50-12T7T

• Igbt Type: Trench
• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.15V @ 15V, 50A
• Current - Collector (ic) (max): 80A
• Current - Collector Cutoff (max): 4mA
• Input Capacitance (cies) @ Vce: 3.5nF @ 25V
• Power - Max: 270W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: E2
• Vces, (v): 1200
• Ic25, Tc = 25°c, Igbt, (a): 80
• Ic80, Tc = 80°c, Igbt, (a): 50
• Vce(sat), Typ, Tj = 25°c, Igbt, (v): 1.7
• Eoff, Typ, Tj = 125°c, Igbt, (mj): 6.5
• Rthjc, Max, Igbt, (k/w): 0.46
• If25, Tc = 25°c, Diode, (a): 85
• If80, Tc = 80°c, Diode, (a): 57
• Package Style: E2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions and dimensions.
© 2010 IXYS All rights reserved
Symbol
T
T
T
V
CTI
M
d
d
R
R
Weight
Equivalent Circuits for Simulation
Symbol
V
R
V
R
Symbol
R
B
Temperature Sensor NTC
Module
VJ
VJM
stg
S
A
ISOL
pin-chip
thCH
I
0
0
0
0
25
25/50
d
V
0
Definitions
operating temperature
max. virtual junction temperature
storage temperature
isolation voltage
comparative tracking index
mounting torque (M5)
creep distance on surface
strike distance through air
resistance pin to chip
thermal resistance case to heatsink
Definitions
IGBT
Diode
Definitions
resistance
R
0
Conditions
Conditions
I
with heatsink compound
Conditions
T1 - T6
D1 - D6
ISOL
< 1 mA; 50/60 Hz
T
T
T
C
VJ
VJ
= 25°C
= 125°C
= 125°C
MWI 50-12T7T
min.
min.
min.
4.75
-40
-40
2.7
6
6
3375
0.02
14.2
Ratings
typ.
Ratings
typ.
Ratings
typ.
180
5.0
1.0
1.1
20
5
max.
max.
2500
max.
5.25
125
150
125
200
3.3
20100831d
3 - 7
Unit
Unit
Unit
K/W
mm
mm
mW
Nm
mW
mW
kW
V~
°C
°C
°C
K
V
V
g