MWI75-12T7T IXYS, MWI75-12T7T Datasheet - Page 5

• Manufacturer Part Number: MWI75-12T7T
• Description: IGBT MOD TRENCH SIX-PACK E3
• Manufacturer: IXYS

Specifications of MWI75-12T7T

• Igbt Type: Trench
• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.15V @ 15V, 75A
• Current - Collector (ic) (max): 110A
• Current - Collector Cutoff (max): 4mA
• Input Capacitance (cies) @ Vce: 5.35nF @ 25V
• Power - Max: 355W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: E2
• Vces, (v): 1200
• Ic25, Tc = 25°c, Igbt, (a): 110
• Ic80, Tc = 80°c, Igbt, (a): 75
• Vce(sat), Typ, Tj = 25°c, Igbt, (v): 1.7
• Eoff, Typ, Tj = 125°c, Igbt, (mj): 9.5
• Rthjc, Max, Igbt, (k/w): 0.35
• If25, Tc = 25°c, Diode, (a): 135
• If80, Tc = 80°c, Diode, (a): 90
• Package Style: E2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions and dimensions.
© 2010 IXYS All rights reserved
[A]
[A]
[mJ]
I
I
Inverter T1 - T6
C
C
E
150
125
100
150
125
100
75
50
25
20
15
10
75
50
25
0
0
5
0
0.0
4
0
Fig. 1 Typ. output characteristic
Fig. 5 Typ.switching losses versus
Fig. 3 Typ. transfer characteristic
V
V
V
R
T
GE
VJ
CE
GE
G
20
V
= 15 V
5
0.5
= 4.7 Ω
= 125°C
CE
= 600 V
= ±15 V
= 20 V
collector current impedance
40
6
1.0
T
T
VJ
60
VJ
7
= 125°C
1.5
= 125°C
V
V
I
C
GE
CE
80
8
[A]
[V]
[V]
2.0
T
VJ
100
9
= 25°C
T
VJ
2.5
= 25°C
120
10
3.0
140
11
E
E
E
rec
on
160
off
3.5
12
[Ω]
R
[A]
100000
I
C
10000
mJ
1000
E
100
150
125
100
10
20
16
12
75
50
25
8
4
0
0
0
0
0
Fig. 6 Typ.switching losses vs. gate resistance
Fig. 4 Typ. NTC resistance versus temperature
Fig. 2 Typ. output characteristic
V
V
I
T
C
VJ
CE
GE
= 125°C
= 600 V
= ±15 V
= 75 A
25
V
10
GE
1
= 13 V
15 V
17 V
19 V
50
20
2
T
R
MWI 75-12T7T
V
C
G
75
CE
[°C]
[Ω]
[V]
30
3
100
T
VJ
= 125°C
40
4
125
20100910e
11 V
E off
E rec
9 V
E
on
150
5 - 6
50
5