CM100RX-12A Powerex Inc, CM100RX-12A Datasheet - Page 3

• Manufacturer Part Number: CM100RX-12A
• Description: IGBT MOD 7PAC 600V 100A NX SER
• Manufacturer: Powerex Inc
• Series: IGBTMOD™r
• Type: IGBTr

Specifications of CM100RX-12A

• Configuration: Three Phase Inverter with Brake
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.1V @ 15V, 100A
• Current - Collector (ic) (max): 100A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 13.3nF @ 10V
• Power - Max: 400W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: Module
• Dc Collector Current: 100A
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 10mW
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -40°C To +150°C
• No. Of Pins: 23
• Voltage: 600V
• Current: 100A
• Circuit Configuration: 7-PAC
• Rohs Compliant: Yes
• Recommended Gate Driver: M57959L
• Recommended Dc To Dc Converter: VLA106-15242
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With: BG2B-5015 - KIT DEV BOARD 2CN 5A FOR IGBTBG2B-3015 - KIT DEV BOARD 2CN 3A FOR IGBTBG2B-1515 - KIT DEV BOARD 1.5A FOR IGBTBG2A-NF - KIT DEV BOARD FOR IGBT
• Igbt Type: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]
CM100RX-12A
Six IGBTMOD™ + Brake NX-Series Module
100 Amperes/600 Volts
Electrical and Mechanical Characteristics, T
Inverter Sector
Characteristics
Collector Cutoff Current
Gate-Emitter Threshold Voltage
Gate Leakage Current
Collector-Emitter Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Inductive
Load
Switch
Time
Reverse Recovery Time
Reverse Recovery Charge
Emitter-Collector Voltage
Thermal and Mechanical Characteristics, T
Characteristics
Thermal Resistance, Junction to Case**
Thermal Resistance, Junction to Case**
Contact Thermal Resistance**
Internal Gate Resistance
External Gate Resistance
**Thermal resistance values are per 1 element.
*1 Case temperature (T
*2 I
*5 Pulse width and repetition rate should be such as to cause negligible temperature rise.
*7 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)].
Rev. 3/09
I
E
F
, I
, I
FM
EM
, I
, V
RRM
EC
, t
, V
rr
FM
and Q
and V
C
) and heatsink temperature (T
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
rr
represent ratings and characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
RRM
represent ratings and characteristics of the clamp diode.
R
V
R
V
Symbol
Symbol
R
V
CE(sat)
f
t
t
th(j-c)
th(j-c)
R
I
I
C
Qrr
GE(th)
C
) are defined on the surface of the baseplate and heatsink at just under the chip.
C
d(on)
d(off)
GES
CES
Q
t
th(j-f)
R
EC
rr
Gint
oes
t
ies
res
t
G
r
f
G
*2
*2
*2
Q
D
j
j
= 25°C unless otherwise specified
= 25°C unless otherwise specified
Inductive Load Switching Operation
V
Case to Heatsink (Per 1 Module)
CC
I
C
I
I
I
E
C
Thermal Grease Applied
E
= 100A, V
= 300V, I
= 100A, V
= 100A, V
V
I
= 100A, V
R
C
I
V
CC
E
V
V
G
CE
I
= 100A, V
C
= 100A, V
GE
CE
= 6.2Ω, I
Test Conditions
= 300V, I
= 10mA, V
V
= 10V, V
Test Conditions
Per FWDi
Per IGBT
T
GE
= V
= V
C
C
GE
GE
GE
GE
= 25°C
= 100A, V
CES
GES
= ±15V,
= 15V, T
GE
= 0V, T
GE
= 15V, T
E
= 0V, T
C
GE
, V
, V
= 100A,
CE
*1
= 100A,
*1
= 15V, Chip
= 0V, Chip
GE
CE
= 0V
= 10V
GE
j
j
j
= 0V
= 0V
= 125°C
j
= 25°C
= 125°C
= 25°C
*1*7
= 15V
*5
*5
*5
*5
Min.
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
5
6
0.015
1.95
Typ.
270
Typ.
1.6
4.8
2.0
1.7
1.9
1.9
—
—
—
—
—
—
—
—
—
—
—
—
—
6
0
Max.
Max.
13.3
0.45
0.31
0.59
100
100
300
600
200
0.5
2.1
2.8
1.0
1.4
—
—
—
—
—
—
—
—
62
7
°C/W
°C/W
°C/W
Units
Volts
Volts
Volts
Volts
Volts
Volts
Volts
Units
mA
µA
nF
nF
nF
nC
µC
ns
ns
ns
ns
ns
Ω
Ω
3