MUBW50-12T8 IXYS, MUBW50-12T8 Datasheet - Page 6

• Manufacturer Part Number: MUBW50-12T8
• Description: MODULE IGBT CBI E3
• Manufacturer: IXYS

Specifications of MUBW50-12T8

• Igbt Type: Trench
• Configuration: Three Phase Inverter with Brake
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.15V @ 15V, 50A
• Current - Collector (ic) (max): 80A
• Current - Collector Cutoff (max): 2.7mA
• Input Capacitance (cies) @ Vce: 3.5nF @ 25V
• Power - Max: 270W
• Input: Three Phase Bridge Rectifier
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: E3
• Vrrm, Rect 1/3 Ph., (v): 1600
• Idavm, Tc = 80°c, Rect 1/3 Ph., (a): 140
• Rthjc, Typ, Rect 1/3 Ph., (k/w): 1.00
• Vces, Inv 3 - Ph., (v): 1200
• Ic25, Tc = 25°c, Inv 3 - Ph., (a): 80
• Ic80, Tc = 80°c, Inv 3 - Ph., (a): 50
• Vce(sat), Typ, Tj = 25°c, Inv 3 - Ph., (v): 1.7
• Rthjc, Typ, Inv 3 - Ph., (k/w): 0.46
• Vces, Br Chopper, (v): 1200
• Ic80, Tc = 80°c, Br Chopper, (a): 35
• Rthjc, Typ, Br Chopper, (k/w): 0.62
• Package Style: E3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

[mJ]
IXYS reserves the right to change limits, test conditions and dimensions.
© 2006 IXYS All rights reserved
[A]
[A]
I
Output Inverter T1 - T6 / D1 - D6
I
C
E
C
100
100
80
60
40
20
80
60
40
20
10
0
0
8
6
4
2
0
0
4
0
Fig. 3 Typical output characteristic
Fig. 5 Typical transfer characteristic
Fig. 7 Typ. switching losses
V
V
R
T
V
VJ
CE
GE
G
GE
V
= 18
= 125°C
= 15 V
CE
= 600 V
= ±15 V
20
= 20 V
vs. collector current
T
6
VJ
40
1
I
= 125°C
C
T
VJ
[A]
E
V
= 25°C
off
CE
60
V
[V]
GE
8
T
[V]
VJ
80
2
= 25°C
T
VJ
E
E
= 125°C
rec
on
100
10
3
[mJ]
E
14
12
10
12
8
6
4
2
0
10
Fig. 8
V
V
I
T
C
E off
VJ
E on
E rec
CE
GE
20
= 125°C
= 600 V
= ±15 V
= 50 A
Typ. switching losses
vs. gate resistance
30
40
R
G
[ ]
50
60
[A]
[A]
I
I
F
C
70
100
100
80
60
40
20
80
60
40
20
0
0
0.0
80
0
Fig. 4 Typical output characteristic
Fig. 6 Typical forward characteristic
T
VJ
= 125°C
[K/W]
Z
thJC
0.5
0.01
of free wheeling diode
1
V
0.1
GE
0.001
1
= 13 V
T
Fig. 9 Transient thermal
VJ
MUBW 50-12 T8
15 V
17 V
19 V
= 125°C
1.0
2
0.01
V
V
CE
F
impedance
single pulse
[V]
[V]
1.5
3
0.1
t [s]
T
VJ
= 25°C
2.0
4
1
diode
IGBT
11 V
9 V
6 - 7
2.5
10
5