CM100RX-24S Powerex Inc, CM100RX-24S Datasheet - Page 4

• Manufacturer Part Number: CM100RX-24S
• Description: IGBT MOD 7PAC 1200V 100A NX SER
• Manufacturer: Powerex Inc
• Series: IGBTMOD™r
• Type: 7-PACr

Specifications of CM100RX-24S

• Featured Product: 6th Generation NX-S Series IGBTs
• Configuration: Three Phase Inverter with Brake
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.15V @ 15V, 100A
• Current - Collector (ic) (max): 100A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 10nF @ 10V
• Power - Max: 750W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: Module
• Module Configuration: Six
• Dc Collector Current: 100A
• Collector Emitter Voltage Vces: 1.2kV
• Power Dissipation Pd: 750W
• Operating Temperature Range: -40°C To +150°C
• Peak Reflow Compatible (260 C): Yes
• Rohs Compliant: Yes
• Leaded Process Compatible: Yes
• Prx Availability: RequestQuote
• Distributorinventory: View
• Voltage: 1200V
• Current: 100A
• Circuit Configuration: 7-Pac
• Recommended Gate Driver: M57159L
• Recommended Dc To Dc Converter: VLA106-15242
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 835-1120

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Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com
CM100RX-24S
Six IGBTMOD™ + Brake NX-S Series Module
100 Amperes/1200 Volts
Electrical and Mechanical Characteristics, T
Brake Sector
Characteristics
Collector Cutoff Current
Gate Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Repetitive Peak Reverse Current
Forward Voltage Drop
Forward Voltage Drop
*3 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi).
*6 Pulse width and repetition rate should be such as to cause negligible temperature rise.
(Terminal)
(Terminal)
V
V
V
Symbol
I
(Chip)
(Chip)
V
V
CE(sat)
CE(sat)
RRM
I
I
C
GE(th)
C
C
GES
CES
Q
EC
EC
oes
res
ies
G
*3
*3
*3
j
= 25°C unless otherwise specified
V
CC
I
I
I
E
C
C
I
I
I
I
I
I
E
E
C
C
C
I
I
E
I
= 50A, V
E
C
= 50A, V
= 50A, V
E
= 600V, I
= 50A, V
= 50A, V
= 50A, V
= 50A, V
= 50A, V
= 50A, V
= 50A, V
V
= 50A, V
= 50A, V
±V
V
GE
I
CE
C
GE
= 5mA, V
Test Conditions
V
= 0V, V
= V
R
GE
= V
GE
GE
C
GE
GE
GE
GE
GE
GE
= V
GE
GE
GE
CES
= 50A, V
GES
= 0V, T
= 15V, T
= 15V, T
= 0V, T
= 0V, T
= 15V, T
= 15V, T
= 15V, T
RRM
= 0V, T
CE
= 0V, T
= 15V, T
= 0V, T
, V
CE
, V
= 10V
GE
CE
j
= 10V
= 150°C
j
j
GE
j
j
j
j
= 125°C
= 150°C
= 0V
j
j
j
j
= 125°C
= 150°C
= 25°C
= 125°C
= 0V
j
= 25°C
= 125°C
= 150°C
= 25°C
= 25°C
= 15V
*6
*6
*6
*6
*6
*6
Min.
5.4
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2.05
1.95
Typ.
2.0
117
1.7
1.9
1.8
1.7
1.7
1.7
1.8
1.8
1.8
—
—
—
—
—
—
6
Max.
2.15
2.25
0.08
2.15
2.25
0.5
6.6
5.0
1.0
—
—
—
—
—
—
—
—
—
1
1
04/10 Rev. 0
Units
Volts
Volts
Volts
Volts
Volts
Volts
Volts
Volts
Volts
Volts
Volts
Volts
Volts
mA
mA
nC
µA
nF
nF
nF