CM300DU-12F Powerex Inc, CM300DU-12F Datasheet - Page 3

IGBT MOD DUAL 600V 300A F SER

CM300DU-12F

Manufacturer Part Number
CM300DU-12F
Description
IGBT MOD DUAL 600V 300A F SER
Manufacturer
Powerex Inc
Series
IGBTMOD™r
Datasheet

Specifications of CM300DU-12F

Igbt Type
Trench
Configuration
Half Bridge
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.2V @ 15V, 300A
Current - Collector (ic) (max)
300A
Current - Collector Cutoff (max)
1mA
Input Capacitance (cies) @ Vce
81nF @ 10V
Power - Max
830W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
Module
Dc Collector Current
300A
Collector Emitter Voltage Vces
600V
Power Dissipation Pd
890W
Collector Emitter Voltage V(br)ceo
600V
Operating Temperature Range
-40°C To +150°C
No. Of Pins
7
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CM300DU-12F
Manufacturer:
ST
Quantity:
16 000
Part Number:
CM300DU-12F
Manufacturer:
MITSUBISHI
Quantity:
26
Part Number:
CM300DU-12F
Quantity:
55
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM300DU-12F
Trench Gate Design Dual IGBTMOD™
300 Amperes/600 Volts
Dynamic Electrical Characteristics, T j = 25°C unless otherwise specified
Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Inductive
Load
Switch
Times
Diode Reverse Recovery Time**
Diode Reverse Recovery Charge**
Thermal and Mechanical Characteristics, T j = 25°C unless otherwise specified
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
R th(j-c) 'Q
R th(j-c) Q
R th(j-c) D
R th(c-f)
Symbol
Symbol
t d(on)
t d(off)
C oes
C ies
C res
Q rr
t rr
t r
t f
Per Module, Thermal Grease Applied
Per FWDi 1/2 Module, T c Reference
Per IGBT 1/2 Module, T c Reference
T c Reference Point Under Chip
Point per Outline Drawing
Point per Outline Drawing
V CC = 300V, I C = 300A,
V CE = 10V, V GE = 0V
Per IGBT 1/2 Module,
V GE1 = V GE2 = 15V,
Switching Operation
Inductive Load
Test Conditions
Test Conditions
R G = 2.1,
I E = 300A
Min.
Min.
Typ.
Typ.
5.2
0.08
0.020
250
120
500
250
150
81
Max.
Max.
5.4
3
0.16
0.24
Units
Units
°C/W
°C/W
°C/W
°C/W
μC
ns
ns
ns
ns
ns
nf
nf
nf
3

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