CM300HA-24H Powerex Inc, CM300HA-24H Datasheet - Page 2

IGBT MOD SGL 1200V 300A H SER

CM300HA-24H

Manufacturer Part Number
CM300HA-24H
Description
IGBT MOD SGL 1200V 300A H SER
Manufacturer
Powerex Inc
Series
IGBTMOD™r
Datasheet

Specifications of CM300HA-24H

Configuration
Single
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.4V @ 15V, 300A
Current - Collector (ic) (max)
300A
Current - Collector Cutoff (max)
1mA
Input Capacitance (cies) @ Vce
60nF @ 10V
Power - Max
2100W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
Module
Transistor Polarity
N Channel
Dc Collector Current
300A
Collector Emitter Voltage Vces
1.2kV
Power Dissipation Pd
2.1kW
Collector Emitter Voltage V(br)ceo
1.2kV
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Igbt Type
-
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant, Contains lead / RoHS non-compliant
Other names
835-1090
CM300HA-24H

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CM300HA-24H
Manufacturer:
MITSUBISHI
Quantity:
100
Part Number:
CM300HA-24H
Manufacturer:
MITSUBISHI
Quantity:
26
Part Number:
CM300HA-24H
Manufacturer:
MITSUBISHI/三菱
Quantity:
20 000
Part Number:
CM300HA-24H
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Part Number:
CM300HA-24H/E
Manufacturer:
MITSUBISH
Quantity:
1 000
2
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
CM300HA-24H
Single IGBTMOD™ H-Series Module
300 Amperes/1200 Volts
Absolute Maximum Ratings, T
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage
Collector Current
Peak Collector Current
Diode Forward Current
Diode Forward Surge Current
Power Dissipation
Max. Mounting Torque M6 Terminal Screws
Max. Mounting Torque M6 Mounting Screws
Max. Mounting Torque M4 Terminal Screws
Module Weight (Typical)
V Isolation
* Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating.
Static Electrical Characteristics, T
Characteristics
Collector-Cutoff Current
Gate Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Total Gate Charge
Diode Forward Voltage
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics, T
Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Resistive
Load
Switching
Times
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
j
= 25 °C unless otherwise specified
j
= 25 °C unless otherwise specified
V
V
Symbol
Symbol
CE(sat)
t
t
I
I
C
GE(th)
V
C
C
d(on)
d(off)
GES
j
CES
Q
Q
t
oes
FM
t
= 25 °C unless otherwise specified
ies
res
t
rr
r
f
G
rr
V
I
CC
C
V
V
I
I
GE
GE1
= 300A, V
E
E
= 600V, I
= 300A, di
= 300A, di
V
V
V
I
I
= 0V, V
C
C
I
CE
GE
CC
E
= V
= 30mA, V
= 300A, V
= 300A, V
Test Conditions
Test Conditions
= V
= V
= 600V, I
GE2
GE
C
CE
CES
GES
= 300A, V
E
E
= 15V, R
= 15V, T
= 10V, f = 1MHz
/dt = –600A/µs
/dt = –600A/µs
, V
, V
GE
CE
GS
C
GE
CE
= 300A
= 15V
= 10V
= 0V
= 0V
= 0V
G
j
GS
= 150°C
= 1.0W
Symbol
V
V
V
T
I
I
= 15V
CES
GES
RMS
CM
P
I
FM
T
I
stg
C
F
d
j
Min.
Min.
4.5
CM300HA-24H
–40 to 150
–40 to 125
1200
2100
2500
600*
600*
±20
300
300
400
26
26
13
1500
2.25
2.23
Typ.
Typ.
6.0
2.5
3.4**
Max.
Max.
250
500
350
350
250
0.5
3.4
1.0
7.5
60
21
12
Amperes
Amperes
Amperes
Amperes
Grams
Rev. 01/10
Watts
Volts
Units
Volts
Volts
in-lb
in-lb
in-lb
°C
°C
Volts
Volts
Volts
Volts
Units
Units
mA
µA
nC
µC
nF
nF
nF
ns
ns
ns
ns
ns

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