CM400DU-12F Powerex Inc, CM400DU-12F Datasheet - Page 3
![IGBT MOD DUAL 600V 400A F SER](/photos/22/16/221651/4613652_sml.jpg)
CM400DU-12F
Manufacturer Part Number
CM400DU-12F
Description
IGBT MOD DUAL 600V 400A F SER
Manufacturer
Powerex Inc
Series
IGBTMOD™r
Datasheet
1.CM400DU-12F.pdf
(4 pages)
Specifications of CM400DU-12F
Igbt Type
Trench
Configuration
Half Bridge
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.2V @ 15V, 400A
Current - Collector (ic) (max)
400A
Current - Collector Cutoff (max)
1mA
Input Capacitance (cies) @ Vce
110nF @ 10V
Power - Max
960W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
Module
Transistor Polarity
N Channel
Dc Collector Current
400A
Collector Emitter Voltage Vces
600V
Power Dissipation Pd
960W
Collector Emitter Voltage V(br)ceo
600V
Operating Temperature Range
-40°C To +150°C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
CM400DU-12F
Manufacturer:
MITSUBISHI
Quantity:
26
Company:
Part Number:
CM400DU-12F
Manufacturer:
MITSUBISHI
Quantity:
560
Part Number:
CM400DU-12F
Manufacturer:
MITSUBISHI/三菱
Quantity:
20 000
Part Number:
CM400DU-12F
Quantity:
55
CM400DU-12F
Trench Gate Design Dual IGBTMOD™
400 Amperes/600 Volts
Rev. 12/09
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
Dynamic Electrical Characteristics, T j = 25°C unless otherwise specified
Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Inductive
Load
Switch
Times
Diode Reverse Recovery Time**
Diode Reverse Recovery Charge**
Thermal and Mechanical Characteristics, T j = 25°C unless otherwise specified
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
R th(j-c) 'Q
R th(j-c) Q
R th(j-c) D
R th(c-f)
Symbol
Symbol
t d(on)
t d(off)
C oes
C res
C ies
Q rr
t rr
t r
t f
Per Module, Thermal Grease Applied
Per FWDi 1/2 Module, T c Reference
Per IGBT 1/2 Module, T c Reference
T c Reference Point Under Chip
Point per Outline Drawing
Point per Outline Drawing
V CC = 300V, I C = 400A,
V CE = 10V, V GE = 0V
Per IGBT 1/2 Module,
V GE1 = V GE2 = 15V,
Switching Operation
Inductive Load
Test Conditions
R G = 3.1Ω,
I E = 400A
Test Conditions
Min.
Min.
–
–
–
–
–
–
–
–
–
–
–
–
–
Typ.
Typ.
–
–
–
–
–
–
–
–
–
0.06
0.020
7.7
400
200
700
250
200
110
Max.
Max.
4
–
0.13
0.18
–
7.2
Units
Units
°C/W
°C/W
°C/W
°C/W
µC
ns
ns
ns
ns
ns
nf
nf
nf
3