CM450DX-24A Powerex Inc, CM450DX-24A Datasheet - Page 3

• Manufacturer Part Number: CM450DX-24A
• Description: IGBT MOD DUAL 1200V 450A NX SER
• Manufacturer: Powerex Inc
• Series: IGBTMOD™, NXr

Specifications of CM450DX-24A

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.6V @ 15V, 450A
• Current - Collector (ic) (max): 450A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 68nF @ 10V
• Power - Max: 2840W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: Module
• Dc Collector Current: 450A
• Collector Emitter Voltage Vces: 1.2kV
• Power Dissipation Pd: 2.84kW
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To +150°C
• No. Of Pins: 11
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With: BG2B-5015 - KIT DEV BOARD 2CN 5A FOR IGBTBG2B-3015 - KIT DEV BOARD 2CN 3A FOR IGBTBG2B-1515 - KIT DEV BOARD 1.5A FOR IGBTBG2A-NF - KIT DEV BOARD FOR IGBT
• Igbt Type: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 835-1021

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]
CM450DX-24A
Dual IGBTMOD™ NX-Series Module
450 Amperes/1200 Volts
Rev. 5/09
Electrical and Mechanical Characteristics, T
Inverter Sector
Characteristics
Collector Cutoff Current
Gate-Emitter Threshold Voltage
Gate Leakage Current
Collector-Emitter Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Inductive
Load
Switch
Time
Reverse Recovery Time
Reverse Recovery Charge
Emitter-Collector Voltage
Thermal and Mechanical Characteristics, T
Characteristics
Module Lead Resistance
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
Internal Gate Resistance
External Gate Resistance
NTC Thermistor Sector, T
Characteristics
Zero Power Resistance
Deviation of Resistance
B Constant
Power Dissipation
*1 Case temperature (T
*2 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)].
*3 I
*6 Pulse width and repetition rate should be such as to cause negligible temperature rise.
*7 R
E
1
, I
: Resistance at Absolute Temperature T
EM
, V
EC
, t
rr
and Q
C
) and heatsink temperature (T
rr
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
represent ratings and characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
*1
j
= 25°C unless otherwise specified
*1
*1
1
(K), R
R
R
V
2
B
V
Symbol
Symbol
R
Symbol
: Resistance at Absolute Temperature T
V
CE(sat)
t
t
R
th(j-c)
R
∆R/R
f
th(j-c)
(25/50)
I
I
C
Qrr
GE(th)
C
C
) are defined on the surface of the baseplate and heatsink at just under the chip.
d(on)
d(off)
CES
GES
t
th(c-f)
P
Q
R
EC
rr
lead
Gint
oes
R
res
t
t
ies
25
r
G
f
G
*3
*3
*3
Q
D
j
j
= 25°C unless otherwise specified
= 25°C unless otherwise specified
Inductive Load Switching Operation
V
B = (InR
Main Termnals-Chip (Per Switch)
Case to Heatsink (Per 1 Module)
CC
I
C
I
C
Thermal Grease Applied
T
= 450A, V
= 600V, I
= 450A, V
I
V
R
C
C
I
V
CC
E
G
V
V
= 100°C, R
I
CE
I
= 450A, V
1
C
E
= 450A, V
CE
GE
= 0.68Ω, I
Test Conditions
Test Conditions
= 600V, I
– InR
= 450A, V
= 45mA, V
V
= 10V, V
T
Test Conditions
T
T
T
GE
Per FWDi
= V
= V
Per IGBT
C
C
C
C
C
GE
= 125°C
GE
= 450A, V
= 25°C
= 25°C
= 25°C
CES
GES
= ±15V,
2
) / (1/T
= 15V, T
GE
GE
= 15V, T
100
C
E
GE
, V
, V
2
GE
CE
= 450A,
(K), T(K) = T(°C) + 273.15
= 450A,
= 15V, Chip
= 0V, Chip
GE
CE
= 493Ω
= 0V
1
= 0V
= 10V
GE
– 1/T
j
= 0V
= 0V
j
= 125°C
= 25°C
*2
= 15V
*6
2
)
*7
*6
*6
0.68
4.85
Min.
Min.
Min.
–7.3
2.8
1.4
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6
0.015
2000
3375
5.00
Typ.
Typ.
Typ.
2.0
2.2
2.6
2.5
0.8
2.0
3.0
1.9
14
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
7
0.044
0.078
Max.
Max.
Max.
68.0
5.15
+7.8
650
250
700
600
250
0.5
2.6
5.9
3.4
2.6
5.2
6.8
1.0
1.4
—
—
—
—
—
—
—
—
10
8
°C/W
°C/W
°C/W
Units
Volts
Volts
Volts
Volts
Volts
Volts
Units
Units
mW
mΩ
mA
nC
µC
kΩ
µA
nF
nF
nF
ns
ns
ns
ns
ns
%
Ω
Ω
Ω
K
3