CM600DY-12NF Powerex Inc, CM600DY-12NF Datasheet - Page 3

• Manufacturer Part Number: CM600DY-12NF
• Description: IGBT MOD DUAL 600V 600A NF SER
• Manufacturer: Powerex Inc
• Series: IGBTMOD™r
• Type: IGBT Moduler

Specifications of CM600DY-12NF

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 600A
• Current - Collector (ic) (max): 600A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 90nF @ 10V
• Power - Max: 1130W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: Module
• Transistor Polarity: N Channel
• Dc Collector Current: 600A
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 1.13kW
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -40°C To +150°C
• Prx Availability: RequestQuote
• Distributorinventory: View
• Voltage: 600V
• Current: 600A
• Circuit Configuration: Dual
• Rohs Compliant: Yes
• Recommended Gate Driver: VLA500
• Interface Circuit Ref Design: BG2A-NF
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With: BG2B-5015 - KIT DEV BOARD 2CN 5A FOR IGBTBG2B-3015 - KIT DEV BOARD 2CN 3A FOR IGBTBG2B-1515 - KIT DEV BOARD 1.5A FOR IGBTBG2A-NF - KIT DEV BOARD FOR IGBT
• Igbt Type: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 835-1023

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com
CM600DY-12NF
Dual IGBTMOD™ NF-Series Module
600 Amperes/600 Volts
Thermal and Mechanical Characteristics, T
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
External Gate Resistance
Rev. 09/09
1200
900
600
300
10
10
10
10
0
4
3
2
1
0
0
V
COLLECTOR-EMITTER VOLTAGE, V
EMITTER-COLLECTOR VOLTAGE, V
GE
20V
=
FORWARD CHARACTERISTICS
OUTPUT CHARACTERISTICS
1
T
T
2
j
j
= 25°C
= 125°C
FREE-WHEEL DIODE
13
15
(TYPICAL)
(TYPICAL)
2
4
6
3
8
CE
EC
T
j
, (VOLTS)
4
, (VOLTS)
8
= 25
12
11
10
9
o
C
10
5
R
R
R
Symbol
R
th(j-c)
th(j-c)
th(j-c)
th(c-f)
R
10
10
10
10
G
0
3
2
1
0
’Q
4
3
2
1
Q
10
D
SATURATION VOLTAGE CHARACTERISTICS
0
-1
COLLECTOR-EMITTER VOLTAGE, V
V
V
j
GE
GE
= 25 °C unless otherwise specified
COLLECTOR-CURRENT, I
Per 1/2 Module, Thermal Grease Applied
= 0V
= 15V
Per FWDi 1/2 Module, T
T
T
Per IGBT 1/2 Module, T
300
j
j
CAPACITANCE VS. V CE
COLLECTOR-EMITTER
T
= 25°C
= 125°C
C
10
Point per Outline Drawing
Point per Outline Drawing
Reference Point Under Chips
0
(TYPICAL)
(TYPICAL)
Per IGBT 1/2 Module,
600
Test Conditions
C
10
, (AMPERES)
1
900
C
C
C
CE
oes
res
ies
, (VOLTS)
C
C
1200
Reference
Reference
10
2
10
10
10
10
10
8
6
4
2
0
3
2
1
0
10
SATURATION VOLTAGE CHARACTERISTICS
6
T
1
Min.
1.0
j
—
—
—
—
= 25°C
GATE-EMITTER VOLTAGE, V
SWITCHING CHARACTERISTICS
COLLECTOR CURRENT, I
8
COLLECTOR-EMITTER
10
0.02
HALF-BRIDGE
Typ.
t
t
t
d(on)
r
—
—
—
—
f
(TYPICAL)
(TYPICAL)
12
10
2
I
I
I
14
C
C
C
= 1200A
= 600A
= 240A
0.046
C
Max.
0.11
0.18
V
V
R
T
Inductive Load
, (AMPERES)
—
10
CC
GE
j
GE
G
16
= 125°C
= 4.2Ω
, (VOLTS)
= 300V
= ±15V
18
t
d(off)
°C/W
°C/W
°C/W
°C/W
Units
10
20
Ω
3
3