MWI150-12T8T IXYS, MWI150-12T8T Datasheet - Page 7

• Manufacturer Part Number: MWI150-12T8T
• Description: MOD IGBT TRENCH SIXPACK E3
• Manufacturer: IXYS

Specifications of MWI150-12T8T

• Igbt Type: Trench
• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.1V @ 15V, 150A
• Current - Collector (ic) (max): 215A
• Current - Collector Cutoff (max): 6mA
• Input Capacitance (cies) @ Vce: 10.77nF @ 25V
• Power - Max: 690W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: E3
• Vces, (v): 1200
• Ic25, Tc = 25°c, Igbt, (a): 215
• Ic80, Tc = 80°c, Igbt, (a): 150
• Vce(sat), Typ, Tj = 25°c, Igbt, (v): 1.7
• Eoff, Typ, Tj = 125°c, Igbt, (mj): 20
• Rthjc, Max, Igbt, (k/w): 0.18
• If25, Tc = 25°c, Diode, (a): 196
• If80, Tc = 80°c, Diode, (a): 132
• Package Style: E3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions and dimensions.
© 2008 IXYS All rights reserved
100000
NTC
10000
1000
30
28
26
24
22
20
18
16
14
12
10
100
8
6
4
2
0
0
Vce = 600V, Vge = +/-15V, Rg = 2.4 W , Tvj = 125°C
Typ. NTC resistance versus temperature
0
Reverse recovery characteristics
25 50 75 100 125 150 175 200 225 250 275 300 325
25
50
If [A]
Tc [°C]
75
100
125
150
0.01
0.1
1
0.001
Typ. transient thermal impedance
Zth(j-c) - igbt
Zth(j-c) - frd
0.01
tp [s]
MWI150-12T8T
0.1
1
20081209b
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