CM300DU-24F Powerex Inc, CM300DU-24F Datasheet - Page 4

• Manufacturer Part Number: CM300DU-24F
• Description: IGBT MOD DUAL 1200V 300A F SER
• Manufacturer: Powerex Inc
• Series: IGBTMOD™r

Specifications of CM300DU-24F

• Igbt Type: Trench
• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 300A
• Current - Collector (ic) (max): 300A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 120nF @ 10V
• Power - Max: 890W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: Module
• Dc Collector Current: 300A
• Collector Emitter Voltage Vces: 1.2kV
• Power Dissipation Pd: 890W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To +150°C
• No. Of Pins: 7
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

4
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]
CM300DU-24F
Trench Gate Design Dual IGBTMOD™
300 Amperes/1200 Volts
600
500
400
300
200
100
10
10
10
10
10
10
0
3
2
1
3
2
1
10
0
0
REVERSE RECOVERY CHARACTERISTICS
1
COLLECTOR-EMITTER VOLTAGE, V
EMITTER-COLLECTOR VOLTAGE, V
T
T
V
V
R
T
Inductive Load
j
j
j
CC
GE
G
= 25 C
= 25
= 25 C
FORWARD CHARACTERISTICS
= 1.0
EMITTER CURRENT, I
OUTPUT CHARACTERISTICS
= 600V
= 15V
o
1.0
C
1
FREE-WHEEL DIODE
V
GE
= 20V
(TYPICAL)
(TYPICAL)
(TYPICAL)
15
2.0
10
11
2
2
8
E
, (AMPERES)
8.5
10
9
3.0
9.5
3
CE
EC
I
t
rr
rr
, (VOLTS)
, (VOLTS)
4.0
10
4
3
10
10
10
3
2
1
10
10
10
10
20
16
12
8
4
0
3
2
1
0
3
2
1
0
10
SATURATION VOLTAGE CHARACTERISTICS
0
0
-1
COLLECTOR-EMITTER VOLTAGE, V
V
V
I
GE
C
GE
COLLECTOR-CURRENT, I
= 300A
100
1000
= 0V
= 15V
T
T
j
j
CAPACITANCE VS. V
COLLECTOR-EMITTER
= 25 C
= 125 C
GATE CHARGE, V
GATE CHARGE, Q
200
10
V
2000
CC
0
(TYPICAL)
(TYPICAL)
= 400V
300
3000
V
C
CC
G
400
C
res
10
, (nC)
, (AMPERES)
GE
C
= 600V
1
CE
oes
4000
CE
, (VOLTS)
500
C
ies
5000
600
10
2
10
10
10
10
10
10
10
10
10
-1
-2
-3
5
4
3
2
1
0
1
0
3
2
1
0
SATURATION VOLTAGE CHARACTERISTICS
10
10
0
1
-3
Per Unit Base
R
R
Single Pulse
T
T
C
j
IMPEDANCE CHARACTERISTICS
th(j-c)
th(j-c)
= 25 C
6
GATE-EMITTER VOLTAGE, V
SWITCHING CHARACTERISTICS
COLLECTOR CURRENT, I
t
t
= 25 C
d(off)
d(on)
I
10
C
t
t
= 0.13 C/W (IGBT)
= 0.15 C/W (FWDi)
TRANSIENT THERMAL
r
f
COLLECTOR-EMITTER
8
= 120A
-2
(IGBT & FWDi)
HALF-BRIDGE
I
10 12 14 16
C
(TYPICAL)
(TYPICAL)
= 300A
TIME, (s)
I
10
10
C
10
= 600A
-1
-5
2
C
V
V
R
T
Inductive Load
, (AMPERES)
j
GE
CC
GE
G
= 125 C
10
10
, (VOLTS)
= 1.0
= 600V
= 15V
-4
0
18 20
10
10
10
3
-3
1
10
10
10
-1
-2
-3