CM1000HA-28H Powerex Inc, CM1000HA-28H Datasheet - Page 2

IGBT MOD SGL 1400V 1000A H SER

CM1000HA-28H

Manufacturer Part Number
CM1000HA-28H
Description
IGBT MOD SGL 1400V 1000A H SER
Manufacturer
Powerex Inc
Series
IGBTMOD™r
Datasheet

Specifications of CM1000HA-28H

Configuration
Single
Voltage - Collector Emitter Breakdown (max)
1400V
Vce(on) (max) @ Vge, Ic
4.5V @ 15V, 1000A
Current - Collector (ic) (max)
1000A
Current - Collector Cutoff (max)
2mA
Input Capacitance (cies) @ Vce
200nF @ 10V
Power - Max
5800W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
Module
Transistor Polarity
N Channel
Dc Collector Current
1kA
Power Dissipation Pd
5.8kW
Collector Emitter Voltage V(br)ceo
1.4kV
Continuous Collector Current Ic
1000A
Collector Emitter Saturation Voltage Vce(sat)
4.5V
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Igbt Type
-
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant, Contains lead / RoHS non-compliant

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
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Manufacturer:
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Manufacturer:
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CM1000HA-28H
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216
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM1000HA-28H
Single IGBTMOD™ H-Series Module
1000 Amperes/1400 Volts
Absolute Maximum Ratings, T
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage
Collector Current
Peak Collector Current
Diode Forward Current
Diode Forward Surge Current
Power Dissipation
Max. Mounting Torque M8 Terminal Screws
Max. Mounting Torque M6 Mounting Screws
Max. Mounting Torque M4 G-E Terminal Screws
Module Weight (Typical)
V Isolation
* Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating.
Static Electrical Characteristics, T
Characteristics
Collector-Cutoff Current
Gate Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Total Gate Charge
Diode Forward Voltage
* Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics, T
Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Resistive
Load
Switching
Times
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Thermal and Mechanical Characteristics, T
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
j
= 25 C unless otherwise specified
j
= 25 C unless otherwise specified
V
V
Symbol
Symbol
Symbol
R
R
R
CE(sat)
t
t
I
I
C
GE(th)
V
C
C
d(on)
d(off)
GES
th(c-f)
CES
Q
j
th(j-c)
th(j-c)
Q
t
oes
FM
res
t
ies
t
= 25 C unless otherwise specified
rr
G
r
f
rr
j
= 25 C unless otherwise specified
Per Module, Thermal Grease Applied
V
I
C
CC
V
V
I
I
E
E
= 1000A, V
GE
GE1
= 800V, I
= 1000A, di
= 1000A, di
V
I
V
V
I
I
C
CC
C
E
= 0V, V
CE
GE
= V
= 100mA, V
= 10000A, V
= 1000A, V
= 800V, I
Test Conditions
Test Conditions
Test Conditions
= V
= V
GE2
Per FWDi
Per IGBT
C
GE
CE
CES
GES
= 1000A, V
= 15V, R
E
E
= 10V, f = 1MHz
/dt = –2000A/ s
/dt = –2000A/ s
= 15V, T
, V
, V
C
GE
CE
GE
GS
= 1000A,
CE
= 15V
= 10V
= 0V
G
= 0V
= 0V
j
GS
= 3.3
= 150 C
Symbol
V
V
V
T
I
I
RMS
CES
GES
P
CM
FM
= 15V
I
T
I
stg
C
F
d
j
Min.
Min.
Min.
5.0
CM1000HA-28H
–40 to +150
–40 to +125
2000*
2000*
1400
1000
1000
5800
1600
2500
95
26
13
5355
20
10.5
Typ.
Typ.
Typ.
6.5
3.1
3.1
0.022
0.050
0.018
Max.
Max.
Max.
2000
1200
2.0
0.5
8.0
4.5
4.0
200
800
650
300
70
40
Amperes
Amperes
Amperes
Amperes
Grams
Watts
Units
Volts
Volts
Volts
in-lb
in-lb
in-lb
Units
Volts
Volts
Volts
Volts
Units
Units
C
C
mA
C/W
C/W
C/W
nC
nF
nF
nF
ns
ns
ns
ns
ns
A
C

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