MWI451-17E9 IXYS, MWI451-17E9 Datasheet - Page 2

• Manufacturer Part Number: MWI451-17E9
• Description: IGBT E9PACK
• Manufacturer: IXYS

Specifications of MWI451-17E9

• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Vces, (v): 1700
• Ic25, Tc = 25°c, Igbt, (a): 580
• Ic80, Tc = 80°c, Igbt, (a): 405
• Vce(sat), Typ, Tj = 25°c, Igbt, (v): 2.25
• Eoff, Typ, Tj = 125°c, Igbt, (mj): 90
• Rthjc, Max, Igbt, (k/w): 0.057
• If25, Tc = 25°c, Diode, (a): -
• If80, Tc = 80°c, Diode, (a): 450
• Package Style: E+
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Package / Case: -
• Power - Max: -
• Configuration: -
• Current - Collector (ic) (max): -
• Voltage - Collector Emitter Breakdown (max): -
• Current - Collector Cutoff (max): -
• Input: -
• Igbt Type: -
• Vce(on) (max) @ Vge, Ic: -
• Input Capacitance (cies) @ Vce: -

Symbol
I
I
I
Symbol
V
I
R
Symbol
R
B
Symbol
T
T
T
V
M
Symbol
R
d
d
R
Weight
*
IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
Diodes
F80
FRM
2
RM
Temperature Sensor NTC
Module
)
t
VJ
JM
stg
S
A
F
ISOL
thJC
25
25/50
term-chip
thCH
d
V = V
*
CE(sat)
)
+ 2x R
Conditions
T
t
T
Conditions
I
I
T
Conditions
T = 25°C
Conditions
operating
I
Mounting torque (M5)
Terminal connection torque (M6)
Conditions
Resistance terminal to chip
Creepage distance on surface
Strike distance in air
with heatsink compound
p
F
F
ISOL
C
VJ
VJ
= 1 ms
= 450 A; V
= 450 A; di
= 80°C
term-chip
= 125°C; t = 10 ms; V
= 125°C; V
≤ 1 mA; 50/60 Hz
· I
C
resp. V = V
GE
F
/dt = 3500 A/µs;
R
= 0 V; T
= 1200 V
F
VJ
+ 2x R
R
= 25°C
= 0 V
term-chip
· I
F
4.75
12.7
min.
min.
min.
10
Characteristic Values
Characteristic Values
Characteristic Values
-40...+125
-40...+125
Maximum Ratings
Maximum Ratings
0.075
3375
0.55
0.01
400
900
35000
typ.
typ.
typ.
5.0
+150
3400
3 - 6
3 - 6
450
900
max.
max.
max.
5.25
2.2
K/W
Nm
Nm
K/W
A
mm
mm
mΩ
V~
°C
°C
°C
kΩ
2
A
A
s
V
A
K
g
MWI 451-17 E9
20070912a
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