CM1000DU-34NF Powerex Inc, CM1000DU-34NF Datasheet - Page 3

• Manufacturer Part Number: CM1000DU-34NF
• Description: IGBT MOD DUAL 1700V 1000A NF SER
• Manufacturer: Powerex Inc
• Series: IGBTMOD™r
• Type: IGBT Moduler

Specifications of CM1000DU-34NF

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 1700V
• Vce(on) (max) @ Vge, Ic: 2.8V @ 15V, 1000A
• Current - Collector (ic) (max): 1000A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 220nF @ 10V
• Power - Max: 3900W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: Module
• Transistor Polarity: N Channel
• Dc Collector Current: 1kA
• Collector Emitter Voltage Vces: 1.7kV
• Power Dissipation Pd: 3.9kW
• Operating Temperature Range: -40°C To +150°C
• No. Of Pins: 15
• Prx Availability: RequestQuote
• Voltage: 1700V
• Current: 1000A
• Circuit Configuration: Dual
• Rohs Compliant: No
• Recommended Gate Driver: VLA500K-01R
• Interface Circuit Ref Design: BG2A
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• For Use With: BG2B-5015 - KIT DEV BOARD 2CN 5A FOR IGBTBG2B-3015 - KIT DEV BOARD 2CN 3A FOR IGBTBG2B-1515 - KIT DEV BOARD 1.5A FOR IGBTBG2A-NF - KIT DEV BOARD FOR IGBT
• Igbt Type: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Contains lead / RoHS non-compliant
• Other names: 835-1003

CM1000DU-34NF
Mega Power Dual™ IGBTMOD
1000 Amperes/1700 Volts
Thermal and Mechanical Characteristics, T
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
External Gate Resistance
02/10 Rev. 1
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com
2000
1600
1200
800
400
10
0
8
6
4
2
0
SATURATION VOLTAGE CHARACTERISTICS
0
0
COLLECTOR-EMITTER VOLTAGE, V
T
j
= 25°C
GATE-EMITTER VOLTAGE, V
OUTPUT CHARACTERISTICS
2
4
I
C
I
COLLECTOR-EMITTER
C
= 1000A
= 400A
13
(TYPICAL)
(TYPICAL)
8
15
4
V
GE
= 20V
12
6
GE
I
, (VOLTS)
C
CE
8
T
= 2000A
16
, (VOLTS)
j
8
= 25 °C
12
11
10
9
10
20
R
R
R
R
Symbol
R
th(j-c')
th(j-c')
th(j-c)
th(j-c)
th(c-f)
R
2000
1600
1200
G
800
400
10
10
10
Q
D
Q
D
0
4
3
2
0.5
0
j
EMITTER-COLLECTOR VOLTAGE, V
V
= 25°C unless otherwise specified
Per 1/2 Module, Thermal Grease Applied
CE
1.0
GATE-EMITTER VOLTAGE, V
TRANSFER CHARACTERISTICS
FORWARD CHARACTERISTICS
Per FWDi 1/2 Module, T
Per FWDi 1/2 Module, T
Per IGBT 1/2 Module, T
= 10V
T
T
4
T
T
j
j
= 25°C
= 125°C
1.5
C
C
FREE-WHEEL DIODE
Point per Outline Drawing
Point per Outline Drawing
Reference Point Under Chip
Reference Point Under Chip
Per IGBT 1/2 Module,
(TYPICAL)
(TYPICAL)
8
2.0
Test Conditions
2.5
12
GE
3.0
, (VOLTS)
T
T
EC
j
j
16
= 25°C
= 125°C
, (VOLTS)
3.5
C
C
C
Reference
Reference
Reference
4.0
20
10
10
10
10
10
-1
0
3
2
1
0
5
4
3
2
1
10
Min.
—
—
SATURATION VOLTAGE CHARACTERISTICS
–
–
–
0.47
0
-1
COLLECTOR-EMITTER VOLTAGE, V
V
V
GE
GE
COLLECTOR-CURRENT, I
500
= 15V
= 0V
T
T
j
j
CAPACITANCE VS. V CE
COLLECTOR-EMITTER
= 25°C
= 125°C
—
—
—
10
Typ.
–
–
0.016
1000
0
(TYPICAL)
(TYPICAL)
1500
Max.
C
0.032
0.053
0.014
0.023
–
4.7
10
, (AMPERES)
1
C
C
C
2000
CE
ies
oes
res
, (VOLTS)
Units
°C/W
°C/W
°C/W
°C/W
°C/W
2500
Ω
10
2
3