MIO600-65E11 IXYS, MIO600-65E11 Datasheet - Page 4

• Manufacturer Part Number: MIO600-65E11
• Description: IGBT MODULE SGL 600A E11
• Manufacturer: IXYS

Specifications of MIO600-65E11

• Igbt Type: NPT
• Configuration: Single Switch
• Voltage - Collector Emitter Breakdown (max): 6500V
• Vce(on) (max) @ Vge, Ic: 4.2V @ 15V, 600A
• Current - Collector (ic) (max): 600A
• Current - Collector Cutoff (max): 120mA
• Input Capacitance (cies) @ Vce: 150nF @ 25V
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: E11
• Vces, (v): 6500
• Ic25, Tc = 25°c, Igbt, (a): 840
• Ic80, Tc = 80°c, Igbt, (a): 600
• Vce(sat), Typ, Tj = 25°c, Igbt, (v): 4.2
• Eoff, Typ, Tj = 125°c, Igbt, (mj): 3250
• Rthjc, Max, Igbt, (k/w): 0.011
• If25, Tc = 25°c, Diode, (a): -
• If80, Tc = 80°c, Diode, (a): 600
• Rthjc, Max, Diode, (k/w): 0.021
• Package Style: E11
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Max: -

© 2011 IXYS All rights reserved
2.5
1.5
0.5
12
10
0.1
2
1
0
10
8
6
4
2
0
1
0
Fig. 11 Turn-off safe operating area (RBSOA)
0
0
Fig. 7 Typical switching energies per pulse
Fig. 9 Typical switching times vs. collector current
V
R
V
R
R
V
Tvj = 125 °C
L
CC
t
Goff
s
CC
GE
t
d(on)
Gon
Goff
d(off)
t
t
= 280 nH
f
r
1000
≤ 4400 V, T
= 2.7 ohm, L
= 3600V
= ±15V
= 3.9 ohm
= 2.7 ohm
Chip
Module
300
versus collector current
300
E
2000
sw
[J] = 4.5 x 10
vj
= 125 °C, V
σ
≤ 280 nH
3000
600
600
V
I
I
C
C
CE
E
-6
[A]
[A]
on
x I
[V]
4000
GE
C
2
+ 8.6 x 10
= ±15 V
V
R
R
V
T
L
900
900
σ
CC
GE
vj
Gon
Goff
E
5000
= 280 nH
= 125 °C
off
= 3600 V
= ±15 V
= 3.9 ohm
= 2.7 ohm
-3
x I
6000
C
1200
+ 0.61
1200
7000
Fig. 14 Typical diode forward characteristics, chip level
20
18
16
14
12
10
0.1
1200
1000
10
8
6
4
2
0
800
600
400
200
1
0
0
Fig. 8 Typical switching energies per pulse
Fig. 10
0
0
Fig. 12 Typ. diode forward characteristics,
V
I
V
T
L
C
vj
σ
CC
GE
= 600A
= 280 nH
= 125 °C
= ±15 V
= 3600 V
versus gate resistor
10
1
10
chip level
Typical switching times vs. gate resistor
E
on
R
R
2
E
G
G
off
20
[ohm]
V
20
[ohm]
F
[V]
25 °C
3
MIO 600-65E11
V
I
V
T
L
C
30
σ
CC
GE
vj
30
= 600 A
= 280 nH
= 125 °C
125 °C
= 3600 V
= ±15 V
4
t
t
t
d(off)
d(on)
t
r
f
40
40
5
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