CPV363M4F Vishay, CPV363M4F Datasheet - Page 5

• Manufacturer Part Number: CPV363M4F
• Description: IGBT SIP MODULE 600V 9A IMS-2
• Manufacturer: Vishay

Specifications of CPV363M4F

• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.63V @ 15V, 16A
• Current - Collector (ic) (max): 16A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 1.1nF @ 30V
• Power - Max: 36W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Through Hole
• Package / Case: 19-SIP (13 Leads), IMS-2
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -
• Other names: *CPV363M4F; VS-CPV363M4F; VS-CPV363M4F; VSCPV363M4F; VSCPV363M4F

Fig. 9 - Typical Switching Losses vs. Gate
0.90
0.88
0.86
0.84
0.82
0.80
2000
1600
1200
800
400
0
0
Fig. 7 - Typical Capacitance vs.
V
V
T
I
1
J
C
CC
GE
Collector-to-Emitter Voltage
= 25 C
= 15V
= 480V
= 8.7A
R , Gate Resistance (Ohm)
V
10
G
CE
°
V
C
C
C
, Collector-to-Emitter Voltage (V)
Resistance
GE
ies
res
oes
=
=
=
=
20
C ies
C oes
C res
0V,
C
C
C
ge
gc
ce
+ C
+ C
10
f = 1MHz
gc ,
gc
30
C
ce
SHORTED
40
50
100
0.1
10
20
16
12
1
8
4
0
Fig. 10 - Typical Switching Losses vs.
-60 -40 -20
0
R
V
V
V
I
Fig. 8 - Typical Gate Charge vs.
GE
CC
G
CC
C
= 22Ohm
= 15V
= 480V
= 400V
= 8.7A
10
Gate-to-Emitter Voltage
T , Junction Temperature ( C )
Junction Temperature
Q , Total Gate Charge (nC)
J
G
0
20
CPV363M4F
20
40
30
60
80 100 120 140 160
40
I =
I =
I =
C
C
C
°
50
17.4
4.35
8.7
A
A
A
60