GA150KS61U Vishay, GA150KS61U Datasheet - Page 4

• Manufacturer Part Number: GA150KS61U
• Description: IGBT FAST 600V 150A INT-A-PAK
• Manufacturer: Vishay

Specifications of GA150KS61U

• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.3V @ 15V, 150A
• Current - Collector (ic) (max): 150A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 13.878nF @ 30V
• Power - Max: 440W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: INT-A-PAK (3 + 4)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -

4
25000
20000
15000
10000
5000
0.01
0.1
0.0001
1
0
Fig. 5 - Typical Capacitance vs.
1
D = 0.50
Collector-to-Emitter Voltage
Fig. 7 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
0.10
0.05
0.02
0.01
0.20
V
CE
V
C
C
C
, Collector-to-Emitter Voltage (V)
GE
ies
res
oes
(Thermal Resistance)
0.001
C res
C ies
C oes
=
=
=
=
Single Pulse
0V,
C
C
C
ge
gc
ce
+ C
+ C
10
f = 1MHz
gc ,
gc
t , Rectangular Pulse Duration (Seconds)
0.01
C
1
ce
SHORTED
100
0.1
20
16
12
8
4
0
1
0
V
Fig. 6 - Typical Gate Charge vs.
I
CC
C
100
N otes:
1. Duty factor D = t / t
2. Peak T = P
= 400V
= 94A
Gate-to-Emitter Voltage
Q , Total Gate Charge (nC)
G
200
J
10
D M
300
x Z
1
thJC
400
2
P
DM
+ T
100
www.irf.com
C
500
t
1
t 2
600
1000
700