GA150TS60U Vishay, GA150TS60U Datasheet - Page 3

• Manufacturer Part Number: GA150TS60U
• Description: IGBT FAST 600V 150A INT-A-PAK
• Manufacturer: Vishay

Specifications of GA150TS60U

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.3V @ 15V, 150A
• Current - Collector (ic) (max): 150A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 14nF @ 30V
• Power - Max: 440W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: INT-A-PAK (3 + 4)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -

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1000
100
120
100
10
80
60
40
20
0
0.1
Fig. 2 - Typical Output Characteristics
1
S q u a re w a v e :
V
CE

T = 25 C
J
, Collector-to-Emitter Voltage (V)
6 0 % o f ra te d
Id e a l d io d e s
o
I
v o lta g e
2

Fig. 1 - Typical Load Current vs. Frequency

T = 125 C
V
20µs PULSE WIDTH
J
GE
= 15V
(Load Current = I
o
1
3
f, Frequency (KHz)
RMS
of fundamental)
1000
100
10
Fig. 3 - Typical Transfer Characteristics
1
5
V
GE
10

T = 125 C
J
6
, Gate-to-Emitter Voltage (V)
GA150TS60U
F o r b o th :
D u ty c y c le : 5 0 %
T = 1 2 5 ° C
T
G a te d riv e a s s p e c ifie d
P o w e r D is s ip a tio n =
J
sink
o
= 9 0 ° C

T = 25 C
J
7

V
5µs PULSE WIDTH
V
80µs PULSE WIDTH
CC
o
CE
92
= 50V
= 25V
W
25V
8
100
3
9